Patents by Inventor Soon Tat Kong

Soon Tat Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9331211
    Abstract: A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: May 3, 2016
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Paul Ronald Stribley, Soon Tat Kong
  • Patent number: 8729666
    Abstract: A capacitor has first and second conducting plates and a dielectric region between the plates, wherein the dielectric region comprises two dielectric materials for each of which the variation of capacitance with voltage can be approximated by a polynomial having a linear coefficient and a quadratic coefficient, and wherein the quadratic coefficients of the two dielectric materials are of opposite sign. The capacitor comprises for example a first capacitor (42) and a second capacitor (44) that one connected in an anti-parallel manner. The insulating layer (18) of the first capacitor comprises silicon nitride and the insulating layer (16) of the second capacitor comprises silicon dioxide.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: May 20, 2014
    Assignee: X-Fab Semiconductor Foundries AG
    Inventors: Paul Ronald Stribley, Soon Tat Kong, David John Verity
  • Publication number: 20120211747
    Abstract: A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area.
    Type: Application
    Filed: August 28, 2009
    Publication date: August 23, 2012
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Paul Ronald Stribley, Soon Tat Kong
  • Publication number: 20120211868
    Abstract: A capacitor has first and second conducting plates and a dielectric region between the plates, wherein the dielectric region comprises two dielectric materials for each of which the variation of capacitance with voltage can be approximated by a polynomial having a linear coefficient and a quadratic coefficient, and wherein the quadratic coefficients of the two dielectric materials are of opposite sign. The capacitor comprises for example a first capacitor (42) and a second capacitor (44) that one connected in an anti-parallel manner.
    Type: Application
    Filed: September 23, 2009
    Publication date: August 23, 2012
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Paul Ronald Stribley, Soon Tat Kong, David John Verity