Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Abstract: The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient.

Abstract: A mobile communication base station antenna includes: a reflecting plate; a first patch-type radiating element installed on the reflecting plate; a second dipole-type radiating element installed and stacked on the first radiating element; and a circuit board for feeding power installed on the same surface as a surface of the reflecting plate on which the first radiating element and the second radiating element are installed and having a conductive pattern formed thereon to provide a feeding signal to the first radiating element.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Abstract: The present invention relates to a multiband antenna comprising: a reflector providing a ground plane; a first radiation module for a first frequency band, provided on the reflector; and a plurality of second radiation modules for a second frequency band, laminated on the first radiation module, wherein: the first radiation module includes first to fourth radiation elements symmetrically combined in four directions on an entire plane, wherein each of the first to fourth radiation elements includes a radiation arm in a cup shape and a support for supporting and fixing the radiation arm to the reflector, and the second radiation modules are provided to each radiation arm of the first to fourth radiation elements, wherein the lower surface of the cup shape of each radiation arm of the first to fourth radiation elements is designed to have a predetermined area for providing the ground plane to the second radiation modules.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Abstract: The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C.

Abstract: The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient.

Abstract: The present invention relates to a multi-band, multi-polarized wireless communication antenna, which comprises: a reflector; at least one first radiation module of a first band which is installed on the reflector; and at least one second or third radiation module of a second band or a third band installed on the reflector, wherein the first radiation module comprises first to fourth radiating elements having a dipole structure, the first to fourth radiating elements are configured such that every two radiating arms thereof are connected in the shape of letter “¬”, one of the two radiating arms is configured to be placed side by side along side of the reflector, and the second or third radiation module is installed to be included within an installation range of the first radiation module.

Abstract: The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C.

Abstract: A mobile communication base station antenna includes: a reflecting plate; a first patch-type radiating element installed on the reflecting plate; a second dipole-type radiating element installed and stacked on the first radiating element; and a circuit board for feeding power installed on the same surface as a surface of the reflecting plate on which the first radiating element and the second radiating element are installed and having a conductive pattern formed thereon to provide a feeding signal to the first radiating element.

Abstract: The present invention relates to a multiband antenna comprising: a reflector providing a ground plane; a first radiation module for a first frequency band, provided on the reflector; and a plurality of second radiation modules for a second frequency band, laminated on the first radiation module, wherein: the first radiation module includes first to fourth radiation elements symmetrically combined in four directions on an entire plane, wherein each of the first to fourth radiation elements includes a radiation arm in a cup shape and a support for supporting and fixing the radiation arm to the reflector, and the second radiation modules are provided to each radiation arm of the first to fourth radiation elements, wherein the lower surface of the cup shape of each radiation arm of the first to fourth radiation elements is designed to have a predetermined area for providing the ground plane to the second radiation modules.

Abstract: The present invention relates to a multi-band, multi-polarized wireless communication antenna, which comprises: a reflector; at least one first radiation module of a first band which is installed on the reflector; and at least one second or third radiation module of a second band or a third band installed on the reflector, wherein the first radiation module comprises first to fourth radiating elements having a dipole structure, the first to fourth radiating elements are configured such that every two radiating arms thereof are connected in the shape of letter “”, one of the two radiating arms is configured to be placed side by side along side of the reflector, and the second or third radiation module is installed to be included within an installation range of the first radiation module.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.