Abstract: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.

Abstract: Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

Abstract: A pellicle is provided for use with a lithographic photomask during manufacture of semiconductor devices, printed circuit boards, liquid crystal displays, etc. The pellicle has a pellicle frame comprising four pellicle walls that define a trapezoidal area sized and shaped to correspond to a pattern area of a lithographic photomask; and a pellicle film extending across the trapezoidal area and affixed to a film-side edge of the pellicle frame; wherein any one of the four pellicle walls has a vent hole therethrough, the vent hole being located proximate a corner of the frame and if matter passes through the vent hole, the foreign matter will not obstruct the pattern area during use of the lithographic photomask.

Abstract: Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

Abstract: A pellicle is provided for use with a lithographic photomask during manufacture of semiconductor devices, printed circuit boards, liquid crystal displays, etc. The pellicle has a pellicle frame comprising four pellicle walls that define a trapezoidal area sized and shaped to correspond to a pattern area of a lithographic photomask; and a pellicle film extending across the trapezoidal area and affixed to a film-side edge of the pellicle frame; wherein any one of the four pellicle walls has a vent hole therethrough, the vent hole being located proximate a corner of the frame and if matter passes through the vent hole, the foreign matter will not obstruct the pattern area during use of the lithographic photomask.

Abstract: Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

Abstract: Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits are provided. In one embodiment, a method for converting a planar integrated circuit design to a non-planar integrated circuit design includes identifying a rectangular silicon active area in the planar integrated circuit design, superimposing a FinFET design grid comprising a plurality of equidistantly-spaced parallel grid lines over the rectangular silicon active area such that two sides of the rectangular silicon active area are parallel to the grid lines, and generating a rectangular active silicon marker area encompassing the silicon active area. Furthermore, the method includes generating fin mandrels longitudinally along every other grid line of the plurality of grid lines and within the active silicon marker area and the silicon active area, and removing the fin mandrels from areas of the design grid outside of the active silicon marker area.

Abstract: Semiconductor wafers employing a fixed coordinate metrology scheme and methods for fabricating integrated circuits using the same are disclosed. In an exemplary embodiment, a semiconductor wafer employing a fixed-coordinate metrology scheme includes an external scribe region in the form of a first rectangular ring, the first rectangular ring defining a first interior space inward from the external scribe region and an interior scribe region in the form of a second rectangular ring, disposed within the first interior space and immediately adjacent to the external scribe region at all points along its exterior perimeter, the second rectangular ring defining a second interior space inward from the interior scribe region, the second interior space being wholly within the first interior space.

Abstract: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.

Abstract: Methods for forming an alignment mark and the resulting mark are disclosed. Embodiments may include forming a first shape having rotational symmetry; forming a second shape; and forming an alignment mark by combining the first shape and one or more of the second shape, wherein the alignment mark has rotational symmetry.

Abstract: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.

Abstract: Semiconductor wafers employing a fixed coordinate metrology scheme and methods for fabricating integrated circuits using the same are disclosed. In an exemplary embodiment, a semiconductor wafer employing a fixed-coordinate metrology scheme includes an external scribe region in the form of a first rectangular ring, the first rectangular ring defining a first interior space inward from the external scribe region and an interior scribe region in the form of a second rectangular ring, disposed within the first interior space and immediately adjacent to the external scribe region at all points along its exterior perimeter, the second rectangular ring defining a second interior space inward from the interior scribe region, the second interior space being wholly within the first interior space.

Abstract: Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits are provided. In one embodiment, a method for converting a planar integrated circuit design to a non-planar integrated circuit design includes identifying a rectangular silicon active area in the planar integrated circuit design, superimposing a FinFET design grid comprising a plurality of equidistantly-spaced parallel grid lines over the rectangular silicon active area such that two sides of the rectangular silicon active area are parallel to the grid lines, and generating a rectangular active silicon marker area encompassing the silicon active area. Furthermore, the method includes generating fin mandrels longitudinally along every other grid line of the plurality of grid lines and within the active silicon marker area and the silicon active area, and removing the fin mandrels from areas of the design grid outside of the active silicon marker area.

Abstract: Methods for forming an alignment mark and the resulting mark are disclosed. Embodiments may include forming a first shape having rotational symmetry; forming a second shape; and forming an alignment mark by combining the first shape and one or more of the second shape, wherein the alignment mark has rotational symmetry.

Abstract: Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

Abstract: A method of manufacture of an integrated circuit system includes: forming reticle data; detecting a sub-geometry, a singularity, or a combination thereof in the reticle data; applying a unit cell, a patch cell, or a combination thereof for removing the sub-geometry, the singularity, or the combination thereof from the reticle data; and fabricating an integrated circuit from the reticle data.

Abstract: An approach for providing conversion of a planar design to a FinFET design is disclosed. Embodiments include: receiving a planar design having a plurality of diffusion regions; overlapping a plurality of parallel fin mandrels with a plurality of evenly-spaced parallel lines of a grid; snapping the diffusion regions to the grid based on the parallel lines; and generating a FinFET design based on the overlapping and the snapping. Embodiments include the parallel lines and the parallel fin mandrels being perpendicular to a poly orientation associated with the planar design, and determining a spacing length between the parallel lines; determining a plurality of edges of the diffusion regions that are parallel to the poly orientation; and cropping the diffusion regions until each of the edges has a length that is a multiple of the spacing length.

Abstract: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.

Abstract: A method of manufacture of an integrated circuit system includes: forming reticle data; detecting a sub-geometry, a singularity, or a combination thereof in the reticle data; applying a unit cell, a patch cell, or a combination thereof for removing the sub-geometry, the singularity, or the combination thereof from the reticle data; and fabricating an integrated circuit from the reticle data.

Abstract: A method of manufacture an integrated circuit system includes: forming an insulation region in a base layer; filling an insulator in the insulation region around a perimeter of a main chip region; forming a contact directly on and within planar extents of the insulator; and forming an upper layer over the contact to protect the main chip region.