Abstract: A system and method for dynamic adjustment of drain or collector voltage of a power amplifier (PA), including a PA having a voltage input, a temperature sensor measuring ambient temperature of the PA, and an adaptive PA control processor that dynamically changes the input voltage based on the ambient temperature, achieving a desired peak power when the system is subjected to high temperatures. In a further embodiment, a power sensor measures output power of the PA, and the control processor dynamically changes the voltage based on output power when the system serves a large cell in a mobile communication infrastructure employing high power. In a further embodiment, a multistage PA and method include amplifier stages having drain or collector voltage inputs, wherein a voltage applied to the inputs are set so as to be proportional to the peak power requirements of each stage, enhancing overall efficiency.

Abstract: A system and method for dynamic adjustment of drain or collector voltage of a power amplifier (PA), including a PA having a voltage input, a temperature sensor measuring ambient temperature of the PA, and an adaptive PA control processor that dynamically changes the input voltage based on the ambient temperature, achieving a desired peak power when the system is subjected to high temperatures. In a further embodiment, a power sensor measures output power of the PA, and the control processor dynamically changes the voltage based on output power when the system serves a large cell in a mobile communication infrastructure employing high power. In a further embodiment, a multistage PA and method include amplifier stages having drain or collector voltage inputs, wherein a voltage applied to the inputs are set so as to be proportional to the peak power requirements of each stage, enhancing overall efficiency.

Abstract: A system and method for dynamic adjustment of drain or collector voltage of a power amplifier (PA), including a PA having a voltage input, a temperature sensor measuring ambient temperature of the PA, and an adaptive PA control processor that dynamically changes the input voltage based on the ambient temperature, achieving a desired peak power when the system is subjected to high temperatures. In a further embodiment, a power sensor measures output power of the PA, and the control processor dynamically changes the voltage based on output power when the system serves a large cell in a mobile communication infrastructure employing high power. In a further embodiment, a multistage PA and method include amplifier stages having drain or collector voltage inputs, wherein a voltage applied to the inputs are set so as to be proportional to the peak power requirements of each stage, enhancing overall efficiency.

Abstract: A system and method for dynamic adjustment of drain or collector voltage of a power amplifier (PA), including a PA having a voltage input, a temperature sensor measuring ambient temperature of the PA, and an adaptive PA control processor that dynamically changes the input voltage based on the ambient temperature, achieving a desired peak power when the system is subjected to high temperatures. In a further embodiment, a power sensor measures output power of the PA, and the control processor dynamically changes the voltage based on output power when the system serves a large cell in a mobile communication infrastructure employing high power. In a further embodiment, a multistage PA and method include amplifier stages having drain or collector voltage inputs, wherein a voltage applied to the inputs are set so as to be proportional to the peak power requirements of each stage, enhancing overall efficiency.

Abstract: The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a first metal electrode layer formed on a polymer-based composite substrate, a dielectric layer, formed on the first metal electrode layer, and made of BiZnNb-based metal oxide with a dielectric constant of at least 15, and a second metal electrode layer formed on the dielectric layer. The BiZnNb-based amorphous metal oxide in this invention has a high dielectric constant without a thermal treatment for crystallization, useful for fabrication of a thin layer capacitor of a polymer-based layered structure such as a PCB.