Patents by Inventor Soon-Young Oh

Soon-Young Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8283654
    Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: October 9, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Han Young Yu, Byung Hoon Kim, Soon Young Oh, Yong Ju Yun, Yark Yeon Kim, Won Gi Hong
  • Patent number: 8047361
    Abstract: Provided are a gas storage structure and a gas storage apparatus including the gas storage structure. The gas storage structure includes a gas storage part including an opening thereon and an entrance control part disposed on the opening and including a gate.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: November 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Han-Young Yu, Byung-Hoon Kim, Soon-Young Oh, Yong-Ju Yun
  • Publication number: 20110008247
    Abstract: Provided is a gas storage method of a gas storage medium having a multilayer structure in which crystalline structures are stacked to be spaced from each other, including selectively storing gas by relatively controlling a space between the crystalline structures or a lattice distance between crystals of each crystalline structure with respect to the van der Waals diameter of gas which is to be stored. According to the gas storage method, it is possible to selectively store gas.
    Type: Application
    Filed: February 2, 2010
    Publication date: January 13, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong Ju YUN, Han Young Yu, Byung Hoon Kim, Soon Young Oh, Won Gi Hong, Yark Yeon Kim, Chang Hee Kim
  • Publication number: 20100314609
    Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
    Type: Application
    Filed: November 19, 2009
    Publication date: December 16, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Han Young YU, Byung Hoon Kim, Soon Young Oh, Yong Ju Yun, Yark Yeon Kim, Won Gi Hong
  • Publication number: 20100155264
    Abstract: Provided are a gas storage structure and a gas storage apparatus including the gas storage structure. The gas storage structure includes a gas storage part including an opening thereon and an entrance control part disposed on the opening and including a gate.
    Type: Application
    Filed: May 8, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Han-Young YU, Byung-Hoon Kim, Soon-Young Oh, Yong-Ju Yun