Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

Abstract: An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.

Abstract: A memory card including a memory controller, a memory system and a method to control a memory are provided. The memory card includes a flash memory, a memory interface outputting a writing data signal to be written into the flash memory, and a multi-level converter transforming the writing data signal into a writing voltage signal to be provided to the flash memory. The writing voltage signal has one of different voltage levels in accordance with plural bits of the writing data signal.

Abstract: A memory card including a memory controller, a memory system and a method to control a memory are provided. The memory card includes a flash memory, a memory interface outputting a writing data signal to be written into the flash memory, and a multi-level converter transforming the writing data signal into a writing voltage signal to be provided to the flash memory. The writing voltage signal has one of different voltage levels in accordance with plural bits of the writing data signal.