Patents by Inventor Soonshin KWON

Soonshin KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire nanoelectromechanical field-effect transistors
    Patent number: 9793417
    Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: October 17, 2017
    Assignee: The Regents of the University of California
    Inventors: Ji Hun Kim, Jie Xiang, Zack Ching-Yang Chen, Soonshin Kwon
  • NANOWIRE NANOELECTROMECHANICAL FIELD-EFFECT TRANSISTORS
    Publication number: 20160056304
    Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.
    Type: Application
    Filed: April 11, 2014
    Publication date: February 25, 2016
    Inventors: Ji Hun KIM, Jie XIANG, Zack Ching-Yang CHEN, Soonshin KWON