Patents by Inventor Sophi Ionova

Sophi Ionova has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implantation before epitaxial growth for photonic integrated circuits
    Patent number: 8900896
    Abstract: Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: December 2, 2014
    Assignee: HRL Laboratories, LLC
    Inventors: Yakov Royter, Rajesh D. Rajavel, Irina Ionova, Sophi Ionova
  • Implantation before epitaxial growth for photonic integrated circuits
    Patent number: 7932512
    Abstract: Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.
    Type: Grant
    Filed: September 27, 2006
    Date of Patent: April 26, 2011
    Assignee: HRL Laboratories, LLC
    Inventors: Yakov I. Royter, Rajesh D. Rajavel, Stanislav I. Ionov, Irina Ionova, legal representative, Sophi Ionova, legal representative