Abstract: The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): wherein R1, R2, R3, R4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

Abstract: The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): wherein R1, R2, R3, R4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.