Abstract: A semiconductor processing device includes a lower chamber having a first supporting area configured to support the wafer, an upper chamber having a second supporting area, wherein when the upper chamber is engaged with the lower chamber, the wafer is placed between the first supporting area and the second supporting area. A temperature control component, disposed adjacent to the upper chamber and/or the lower chamber, adjusts the temperature of the upper chamber and/or the lower chamber by adjusting its own temperature. A first channel formed at the edge area of the first supporting area or the second supporting area. The first channel provides a first space for the flow of one or more chemical fluids for etching the edge area of the wafer. The upper chamber and/or the lower chamber includes a positioning structure. The present disclosure adjusts the positioning function of the positioning structure by adjusting the temperature.

Abstract: A semiconductor processing device includes a lower chamber having a first supporting area to support the wafer, an upper chamber having a second supporting area and a temperature control component. When the upper chamber is engaged with the lower chamber, the wafer is placed between the first and the second supporting areas. The temperature control component is disposed adjacent to the upper chamber and/or the lower chamber, to adjust the temperature of the upper chamber and/or the lower chamber by adjusting its own temperature. A first channel formed at an edge area of the first supporting area or the second supporting area. The first channel provides a first space for the flow of one or more chemical fluids for etching the edge area. The temperature control component adjusts the temperature of the upper chamber and/or the lower chamber, thereby adjusting an etching width of the edge of the wafer.

Abstract: An apparatus for processing an edge surface of a wafer comprises a lower chamber having a first supporting area configured to support the wafer, an upper chamber having a second supporting area, and a first channel formed by the first supporting area, the second supporting area and peripheral areas thereof. The upper chamber is engaged with the lower chamber to position the wafer between the first supporting area and the second supporting area. The first channel is configured to provide a first space to flow one or more chemical fluids for etching an edge area of the wafer. The upper chamber comprises a protrusion part being configured to resist against an outer edge of the wafer in order to align the central axis of the wafer with the central axis of the second supporting area. This disclosure can process the edge of wafers.