Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Abstract: The present invention provides methods of tuning the optical properties, such as the channel center wavelengths, of an integrated optical waveguide device by providing a device, such as a wavelength division multiplexer or demultiplexer, which contains an organic material, and fine tuning the device by exposing the organic material to at least one incremental step of UV irradiation.

Abstract: An athermalized optical waveguide circuit device exhibiting reduced signal power losses includes an optical phased-array comprising a plurality of curved waveguide cores of different lengths supported on a planar substrate, wherein each of the waveguide cores of the array includes a first silica segment, a second silica segment, and a central polymer segment connecting the first silica segment with the second silica segment to form a continuous waveguide core.

Abstract: The present invention provides methods of tuning the optical properties, such as the channel center wavelengths, of an integrated optical waveguide device by providing a device, such as a wavelength division multiplexer or demultiplexer, which contains an organic material, and fine tuning the device by exposing the organic material to at least one incremental step of UV irradiation.

Abstract: The present invention provides an athermalized organic-containing overclad integrated planar optical waveguide circuit device in which thermal induced shifting of channel wavelengths is minimized. The organic-containing overclad material is combined with a silica or doped silica glass material in the form of a local overclad, a bi-layer overclad, or a hybrid overclad. The organic-containing overclad material is a polymer or a sol-gel material.

Abstract: A passive temperature-compensated integrated optical component having an array of adjacent waveguides, and a slab waveguide located within a groove at an intermediate section of the array. The waveguides have an index of refraction that increases with increasing temperature, and the slab waveguide has an index of refraction that decreases with increasing temperature. The slab waveguide compensates for a temperature-induced change in the refractive index of the waveguides to maintain a generally constant optical path difference between the adjacent waveguides over a temperature range.

Abstract: An athermalized, polymer overclad integrated optical device (with a multiplexer/demultiplexer or a Mach-Zender interferometer being representative examples) in which thermally-induced shifts in channel wavelengths are minimized. The device includes a doped silica waveguide core on a planar substrate and a polymer overclad having a negative variation in refractive index versus temperature (dn/dT) to inhibit shifts in the channel wavelengths.

Abstract: The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.