Abstract: Disclosed is a diffractive optical element includes a substrate (BS) having a first surface and a second surface opposite the first surface, being transparent to light in at least one spectral range and having, in the spectral range, a refractive index that is greater than that of water, at least one metasurface able to diffract light radiation of wavelength ? within the spectral range, incident with an angle of incidence, according to a diffracted radiation, so that the diffracted radiation propagates in the substrate and reaches the second surface of the substrate at a diffracted angle ?d that is greater than or equal to a limit angle (?c) of total internal reflection between the substrate and water, the metasurface being designed to have, for the angle of incidence, a transmission with a 0 order of diffraction below 5% and a transmission of the diffracted radiation corresponding to a ?1 or +1 order of diffraction above 50%.

Abstract: A lighting device for total-internal-reflection fluorescence microscopy includes a substrate that is transparent to light, having a refractive index higher than that of water; a light-emitting device arranged in the interior of the substrate, suitable for emitting light radiation in the direction of a surface of the substrate, the light-emitting device being arranged such that at least one portion of the radiation reaches the surface with an angle of incidence larger than or equal to a critical angle of total internal reflection for an interface between the substrate and water; and at least one opaque mask, arranged in the interior or on the surface of the substrate so as to intercept a portion of the radiation that, in the absence of the mask, would reach the surface with an angle of incidence smaller than the critical angle. A lighting device to total-internal-reflection fluorescence microscopy is provided.

Abstract: A lighting device for total-internal-reflection fluorescence microscopy includes a substrate that is transparent to light, having a refractive index higher than that of water; a light-emitting device arranged in the interior of the substrate, suitable for emitting light radiation in the direction of a surface of the substrate, the light-emitting device being arranged such that at least one portion of the radiation reaches the surface with an angle of incidence larger than or equal to a critical angle of total internal reflection for an interface between the substrate and water; and at least one opaque mask, arranged in the interior or on the surface of the substrate so as to intercept a portion of the radiation that, in the absence of the mask, would reach the surface with an angle of incidence smaller than the critical angle. A lighting device to total-internal-reflection fluorescence microscopy is provided.

Abstract: The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

Abstract: The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

Abstract: Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The virtual Germanium substrate (15) comprises a pure Germanium layer (15.3). Formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process.

Abstract: Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The virtual Germanium substrate (15) comprises a pure Germanium layer (15.3). Formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process.