Abstract: An electrochromic device can include a substrate, a transparent conductive oxide layer over the substrate, and a bus bar over the substrate. The bus bar can include silver and has a resistivity of at most 6.7×10?6 ?*cm, an average adhesion strength to SiO2 of at least 3N based on 20 measurements, as determined by Method A of ASTM B905-00 (Reapproved 2010), or a classification of at least 4, as determined by Method B of ASTM B905-00 (Reapproved 2010). In another aspect a process of forming an electrochromic device can include forming a transparent conductive oxide layer over a substrate; forming a bus bar precursor over the substrate, wherein the precursor includes silver; and firing the precursor to form a bus bar. Firing can be performed such that the first bus bar is at a temperature of at least 390° C.

Abstract: A material including a transparent substrate coated with a stack acting on infrared radiation includes at least one functional layer and at least one upper protective layer deposited above at least a part of the functional layer. The upper protective layer is a hydrogenated carbon layer, within which layer the carbon atoms form carbon-carbon and carbon-hydrogen bonds and are essentially in an sp2 hybridization state.

Abstract: A substrate is coated on one face with a thin-films stack having reflection properties in the infrared and/or in solar radiation including at least one metallic functional layer, based on silver or on a metal alloy containing silver, and at least two antireflection coatings. The coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflection coatings. The stack also includes a terminal layer which is the layer of the stack which is furthest from the face. The terminal layer is a metallic layer consisting of zinc and tin, made of SnxZny with a ratio of 0.1?x/y?2.4 and having a physical thickness of between 0.5 nm and 5.0 nm excluding these values, or even between 0.6 nm and 2.7 nm excluding these values.

Abstract: An electrochromic device can include a substrate; an electrochromic layer or a counter electrode layer over the substrate and including a mobile ion; a first transparent conductive layer over the substrate and including Ag. In one embodiment, the electrochromic device can include a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer. In another embodiment, the electrochromic device can include means for preventing (1) the mobile ion from migrating into the first transparent conductive layer, (2) Ag from migrating into the electrochromic layer or counter electrode layer, or both (1) and (2). A process of forming an electrochromic device can include forming an electrochromic layer or a counter electrode layer over a substrate; forming a barrier layer; and forming a first transparent conductive layer over the substrate.

Abstract: An electrochromic device can include a substrate; an electrochromic layer or a counter electrode layer over the substrate and including a mobile ion; a first transparent conductive layer over the substrate and including Ag. In one embodiment, the electrochromic device can include a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer. In another embodiment, the electrochromic device can include means for preventing (1) the mobile ion from migrating into the first transparent conductive layer, (2) Ag from migrating into the electrochromic layer or counter electrode layer, or both (1) and (2). A process of forming an electrochromic device can include forming an electrochromic layer or a counter electrode layer over a substrate; forming a barrier layer; and forming a first transparent conductive layer over the substrate.

Abstract: An electrochromic device can include a substrate, a transparent conductive oxide layer over the substrate, and a bus bar over the substrate. The bus bar can include silver and has a resistivity of at most 6.7×10?6 ?*cm, an average adhesion strength to SiO2 of at least 3N based on 20 measurements, as determined by Method A of ASTM B905-00 (Reapproved 2010), or a classification of at least 4, as determined by Method B of ASTM B905-00 (Reapproved 2010). In another aspect a process of forming an electrochromic device can include forming a transparent conductive oxide layer over a substrate; forming a bus bar precursor over the substrate, wherein the precursor includes silver; and firing the precursor to form a bus bar. Firing can be performed such that the first bus bar is at a temperature of at least 390° C.

Abstract: An electrochromic device can include a substrate, a transparent conductive oxide layer over the substrate, and a bus bar over the substrate. The bus bar can include silver and has a resistivity of at most 6.7×10?6 ?*cm, an average adhesion strength to SiO2 of at least 3N based on 20 measurements, as determined by Method A of ASTM B905-00 (Reapproved 2010), or a classification of at least 4, as determined by Method B of ASTM B905-00 (Reapproved 2010). In another aspect a process of forming an electrochromic device can include forming a transparent conductive oxide layer over a substrate; forming a bus bar precursor over the substrate, wherein the precursor includes silver; and firing the precursor to form a bus bar. Firing can be performed such that the first bus bar is at a temperature of at least 390° C.

Abstract: A glazing includes a transparent substrate coated with a stack of thin layers including at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings. The stack includes at least one antireflective coating including a dielectric layer capable of generating defects of hole type and at least one blocking layer based on titanium oxide exhibiting a thickness of greater than 1 nm, the blocking layer being located between the antireflective coating including a dielectric layer capable of generating defects of hole type and a silver-based functional metal layer, immediately in contact with the silver-based functional metal layer.

Abstract: A process for obtaining a material including a transparent substrate coated with a stack of thin layers which are deposited by cathode sputtering, the stack of thin layers includes at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings, the process including: (a) depositing an antireflective coating including at least one thin layer based on crystalline nickel oxide, wherein the at least one thin layer based on crystalline nickel oxide is devoid of a nickel and chromium alloy, then (b) depositing at least one silver-based functional metal layer above and in contact with the thin layer based on crystalline nickel oxide.

Abstract: A process for obtaining a material including a transparent substrate coated with a stack of thin layers which are deposited by cathode sputtering, optionally assisted by a magnetic field, including at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings, the process includes the sequence of following stages: (a) an antireflective coating including at least one thin layer based on crystalline nickel oxide is deposited, then (b) at least one silver-based functional metal layer is deposited above and in contact with the thin layer based on crystalline nickel oxide.

Abstract: A material includes a transparent substrate coated with a stack of thin layers including at least one silver-based functional metal layer, including a doping element, of thickness E formed from monocrystalline grains having a lateral dimension D, defined as a line along the grain edge. The D/E ratio is greater than 1.05.

Abstract: A material including a transparent substrate coated with a stack acting on infrared radiation includes at least one functional layer and at least one upper protective layer deposited above at least a part of the functional layer. The upper protective layer is a hydrogenated carbon layer, within which layer the carbon atoms form carbon-carbon and carbon-hydrogen bonds and are essentially in an sp2 hybridization state.

Abstract: A glazing includes a transparent substrate coated with a stack of thin layers including at least one functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings. The stack includes at least one silver-based functional metal layer including at least 95.0% by weight of silver, with respect to the weight of the functional layer, and from 0.5 to 3.5% by weight of zinc, with respect to the weight of zinc and silver in the functional layer.

Abstract: An electrochromic device can include a substrate; an electrochromic layer or a counter electrode layer over the substrate and including a mobile ion; a first transparent conductive layer over the substrate and including Ag. In one embodiment, the electrochromic device can include a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer. In another embodiment, the electrochromic device can include means for preventing (1) the mobile ion from migrating into the first transparent conductive layer, (2) Ag from migrating into the electrochromic layer or counter electrode layer, or both (1) and (2). A process of forming an electrochromic device can include forming an electrochromic layer or a counter electrode layer over a substrate; forming a barrier layer; and forming a first transparent conductive layer over the substrate.

Abstract: An electrochromic device can include a substrate, a transparent conductive oxide layer over the substrate, and a bus bar over the substrate. The bus bar can include silver and has a resistivity of at most 6.7×10?6 ?*cm, an average adhesion strength to SiO2 of at least 3N based on 20 measurements, as determined by Method A of ASTM B905-00 (Reapproved 2010), or a classification of at least 4, as determined by Method B of ASTM B905-00 (Reapproved 2010). In another aspect a process of forming an electrochromic device can include forming a transparent conductive oxide layer over a substrate; forming a bus bar precursor over the substrate, wherein the precursor includes silver; and firing the precursor to form a bus bar. Firing can be performed such that the first bus bar is at a temperature of at least 390° C.

Abstract: A substrate is coated on one face with a thin-films stack having reflection properties in the infrared and/or in solar radiation including at least one metallic functional layer, based on silver or on a metal alloy containing silver, and at least two antireflection coatings. The coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflection coatings. The stack also includes a terminal layer which is the layer of the stack which is furthest from the face. The terminal layer is a metallic layer consisting of zinc and tin, made of SnxZny with a ratio of 0.1?x/y?2.4 and having a physical thickness of between 0.5 nm and 5.0 nm excluding these values, or even between 0.6 nm and 2.7 nm excluding these values.

Abstract: A process for obtaining a material including a transparent substrate coated with a stack of thin layers which are deposited by cathode sputtering, optionally assisted by a magnetic field, including at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings, the process includes the sequence of following stages: (a) an antireflective coating including at least one thin layer based on crystalline nickel oxide is deposited, then (b) at least one silver-based functional metal layer is deposited above and in contact with the thin layer based on crystalline nickel oxide.

Abstract: A process for obtaining a material including a transparent substrate coated with a stack of thin layers including at least one silver-based functional metal layer located above at least one antireflective coating, the transparent substrate coated with the stack to be subjected to a heat treatment at a temperature Tmax of greater than 400° C., the antireflective coating including at least one dielectric layer configured to generate defects of hole type, the process including depositing the antireflective coating including at least one dielectric layer liable to generate defects of hole type on the transparent substrate, then subjecting the dielectric layer configured to generate defects of hole type to a heat pretreatment, then depositing the at least one silver-based functional metal layer.

Abstract: A glazing includes a transparent substrate coated with a stack of thin layers including at least one functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings. The stack includes at least one silver-based functional metal layer including at least 95.0% by weight of silver, with respect to the weight of the functional layer, and from 0.5 to 3.5% by weight of zinc, with respect to the weight of zinc and silver in the functional layer.

Abstract: A glazing includes a transparent substrate coated with a stack of thin layers including at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings. The stack includes at least one antireflective coating including a dielectric layer capable of generating defects of hole type and at least one blocking layer based on titanium oxide exhibiting a thickness of greater than 1 nm, the blocking layer being located between the antireflective coating including a dielectric layer capable of generating defects of hole type and a silver-based functional metal layer, immediately in contact with the silver-based functional metal layer.