Abstract: This method of electrically connecting insulated-gate bipolar transistor chips mounted on an integrated-circuit wafer (10), consists in welding the collector, emitter and gate-control electrodes (26, 28) to corresponding connection locations (14, 16) of the chips. At least some of the emitter electrodes (26) are made in a single piece in the form of a plate (20) of electrically conducting material which, on one of its large faces, has protruding parts which define connection pads that are welded to the corresponding connection locations.

Abstract: This method of fabricating a gate-control electrode (28) for an insulated-gate bipolar transistor, from a plate of electrically conducting material which is covered with an electrically insulating layer (22) and, on one of its large faces, delimits a connection pad intended to be soldered to the gate, includes the steps consisting in, on the pad, forming an electrically conductive layer (30) covering the electrically insulating layer (22), on the plate, forming an electrically conductive track for supplying the connection pad, and burying the supply track.

Abstract: The invention relates to an electronic power module comprising electronic power components (1) each having at least one contact face (2), control connections (4) for connecting the components to a control module, power connections (5) for conveying power between the components and/or other modules, and at least one metal heat exchanger (6) for removing power dissipated by the Joule effect in the electronic power components (1). According to the invention the contact faces (2) of the electronic power components (1) are mounted directly on the metal heat exchanger (6), the metal heat exchanger (6) being at the same potential as the contact faces (2) of the electronic power components (1).