Abstract: A method of manufacturing an interposer product that includes: forming on a same side of an interposer substrate, by a common process, first and second portions of a gold layer, wherein the first portion of the gold layer constitutes a wire-bonding pad; depositing a Au—Sn solder on the second portion of the gold layer, the Au—Sn solder comprising a gold-tin alloy having a first composition; merging the deposited Au—Sn solder with the second portion of the gold layer by performing a reflow process to form at least one bonding bump, wherein a majority of the bonding bump is made of a eutectic composition of the gold-tin alloy, and wherein the first composition has a smaller proportion of gold than is in the eutectic composition of the gold-tin alloy; and planarizing the bonding bump to form a flat bonding bump having a selected height.

Abstract: RC architectures are provided that include a substrate provided with a capacitor having a thin-film top electrode portion at a surface of the substrate on one side thereof. The resistance provided in series with the capacitor is controlled by providing a contact plate, spaced from the thin-film top electrode portion, and a set of plural bridging contacts extending between, and electrically interconnecting, the thin-film top electrode portion and the contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. The capacitor can be a three-dimensional capacitor and contacts are then provided on respective first and second sides of the substrate, which face each other in the thickness direction of the substrate.