Abstract: A piezoelectric shear mode sensor element comprises a sensor block made of a piezoelectric material having an intrinsic polarization axis, wherein the piezoelectric material is also pyroelectric. The sensor block has in an axial direction axial ends and in lateral directions perpendicular to the axial direction lateral side faces. The sensor electrodes are adapted for capturing a shear mode sensor signal. The sensor element further comprises a discharge guard adapted to locally alter and/or rearrange charges so as to counteract pyroelectric displacement charges on the lateral side faces of the sensor block.

Abstract: A fiber optical accelerometer comprising a base structure, a first seismic mass movably coupled to the base structure through a first hinge element, a second seismic mass movably coupled to the base structure through a second hinge element, an optical fiber coupled to the first and second seismic masses at first and second attachment joints, respectively, to subject the optical fiber to varying strain by displacement of the first and second seismic masses about the first and second hinge structures, respectively.

Abstract: A fibre optical accelerometer comprising a base structure, a first seismic mass movably coupled to the base structure through a first hinge element, a second seismic mass movably coupled to the base structure through a second hinge element, an optical fibre coupled to the first and second seismic masses at first and second attachment joints, respectively, to subject the optical fibre to varying strain by displacement of the first and second seismic masses about the first and second hinge structures, respectively.

Abstract: This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallized to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.

Abstract: This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallised to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.