Abstract: In one embodiment, a circuit comprises a first pair of elements, a second pair of elements, a combiner, and a signal output. Each element in the first and second pair of elements comprises an amplitude-control input for receiving an amplitude-control bit, a phase-control input for receiving a phase-control bit, a signal input for receiving an input signal, a modulator for producing an output signal based on the amplitude-control bit, the phase-control bit, and the input signal, and an signal output for transmitting the output signal to the combiner. The combiner combines the two output signals from the first and second pair of elements to produce an output signal for the circuit to be transmitted by the signal output of the circuit.

Abstract: A system-on-chip (SOC) transceiver is provided. The transceiver is configured to operate in excess of 100 GHz and comprising the following components. A quadrature oscillator is configured to generate a fundamental frequency and a second harmonic frequency and comprises at least a pair of high frequency outputs at said second harmonic frequency. At least the second harmonic frequency exceeds 100 GHz. A transmission output is coupled to one of the high frequency outputs for transmitting an output signal at the second harmonic frequency. A transmission signal transformer is coupled to the other one of the high frequency outputs and configured to generate a differential oscillator signal at the second harmonic frequency. A radio frequency input receives radio frequency signals at the transceiver from an antenna. A radio frequency signal transformer coupled to the radio frequency input is configured to generate a differential radio frequency signal at the radio frequency.

Abstract: In one embodiment, a circuit comprises a first pair of elements, a second pair of elements, a combiner, and a signal output. Each element in the first and second pair of elements comprises an amplitude-control input for receiving an amplitude-control bit, a phase-control input for receiving a phase-control bit, a signal input for receiving an input signal, a modulator for producing an output signal based on the amplitude-control bit, the phase-control bit, and the input signal, and an signal output for transmitting the output signal to the combiner. The combiner combines the two output signals from the first and second pair of elements to produce an output signal for the circuit to be transmitted by the signal output of the circuit.

Abstract: A system-on-chip (SOC) transceiver is provided. The transceiver is configured to operate in excess of 100 GHz and comprising the following components. A quadrature oscillator is configured to generate a fundamental frequency and a second harmonic frequency and comprises at least a pair of high frequency outputs at said second harmonic frequency. At least the second harmonic frequency exceeds 100 GHz. A transmission output is coupled to one of the high frequency outputs for transmitting an output signal at the second harmonic frequency. A transmission signal transformer is coupled to the other one of the high frequency outputs and configured to generate a differential oscillator signal at the second harmonic frequency. A radio frequency input receives radio frequency signals at the transceiver from an antenna. A radio frequency signal transformer coupled to the radio frequency input is configured to generate a differential radio frequency signal at the radio frequency.

Abstract: An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor Q.sub.1 which may be a common emitter bipolar transistor or common source MOSFET transistor Q.sub.1, a second optional transistor Q.sub.2, a first inductor L.sub.E in the emitter (source) of Q.sub.1, and a second inductor L.sub.B in the base (gate) of Q1. The emitter length l.sub.E1, or correspondingly the gate width w.sub.g, of Q1 is designed such that the real part of its optimum noise impedance is equal to the characteristic impedance of the system, Z.sub.0, which is typically 50.OMEGA.. The first inductor L.sub.E, provides matching of the real part of the input impedance and the second inductor L.sub.B cancels out the noise reactance and input impedance reactance of the structure.

Abstract: An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor Q.sub.1 which may be a common emitter bipolar transistor or common source MOSFET transistor Q.sub.1, a second optional transistor Q.sub.2, a first inductor L.sub.E in the emitter (source) of Q.sub.1, and a second inductor L.sub.B in the base (gate) of Q1. The emitter length l.sub.E1, or correspondingly the gate width w.sub.g, of Q1 is designed such that the real part of its optimum noise impedance is equal to the characteristic impedance of the system, Z.sub.0, which is typically 50.OMEGA.. The first inductor L.sub.E, provides matching of the real part of the input impedance and the second inductor L.sub.B cancels out the noise reactance and input impedance reactance of the structure.

Abstract: A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the base width and therefore the base resistance compared with conventional lateral bipolar transistors, thus improving f.sub.t and f.sub.max. The polysilicon emitter and collector contacts improve the emitter efficiency and current gain, and allows for more flexible contact placement. The process is compatible with conventional double-poly bipolar processes.

Abstract: A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the base width and therefore the base resistance compared with conventional lateral bipolar transistors, thus improving f.sub.t and f.sub.max. The polysilicon emitter and collector contacts improve the emitter efficiency and current gain, and allows for more flexible contact placement. The process is compatible with conventional double-poly bipolar processes.