Abstract: A die seal ring including a two-dimensional electron gas is presented herein. A semiconductor device comprises an active device region. The active device region comprises a device terminal; and a die seal ring comprising a two dimensional electron gas region surrounds the active device region. By electrically coupling the device terminal to the two dimensional electron gas region, voltages at the semiconductor sidewall may be controlled to substantially equal that of the device terminal.

Abstract: A controller includes first and second half bridge sense circuits coupled to a half bridge node. The half bridge node is coupled between a high side switch and a low side switch coupled to an input. A rising slew detection circuit is coupled to the first half bridge sense circuit to output a first slew detection signal in response to a rising slew event at the half bridge node. A falling slew detection circuit is coupled to the second half bridge sense circuit to output a second slew detection signal in response to a falling slew event at the half bridge node. A control circuit coupled to output a high side drive signal to the high side switch and a low side drive signal to the low side switch in response to the first slew detection signal, the second slew detection signal, and a feedback signal.

Abstract: Silicon carbide (SiC) junction field effect transistors (JFETs) are presented herein. A deep implant (e.g., a deep p-type implant) forms a JFET gate (106). MET gate and MET source (108) may be implemented with heavily doped n-type (N+) and heavily doped p-type (P+) implants, respectively. Termination regions may be implemented by using equipotential rings formed by deep implants (e.g., deep p-type implants).

Abstract: A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a controllable depth. The controllable depth may be varied to advantageously adjust output capacitance.

Abstract: Silicon carbide (SiC) junction field effect transistors (JFETs) are presented herein. A deep implant (e.g., a deep p-type implant) forms a JFET gate (106). MET gate and MET source (108) may be implemented with heavily doped n-type (N+) and heavily doped p-type (P+) implants, respectively. Termination regions may be implemented by using equipotential rings formed by deep implants (e.g., deep p-type implants).

Abstract: A superjunction device comprising a drain contact, a substrate layer above the drain contact, an epitaxial layer above the substrate layer, a P+ layer above the epitaxial layer formed by P-type implantation to a bottom of the superjunction device, a trench with a sloped angle formed by use of a hard mask layer. The trench is filled with an insulating material. A first vertical column is formed adjacent to the trench. A second vertical column is formed adjacent to the first vertical column. A source contact is coupled to the first vertical column and the second vertical column. A P-body region is coupled to the source contact. A gate oxide is formed above the source contact and the epitaxial layer, and a gate formed above the gate oxide.

Abstract: A controller includes first and second half bridge sense circuits coupled to a half bridge node. The half bridge node is coupled between a high side switch and a low side switch coupled to an input. A rising slew detection circuit is coupled to the first half bridge sense circuit to output a first slew detection signal in response to a rising slew event at the half bridge node. A falling slew detection circuit is coupled to the second half bridge sense circuit to output a second slew detection signal in response to a falling slew event at the half bridge node. A control circuit coupled to output a high side drive signal to the high side switch and a low side drive signal to the low side switch in response to the first slew detection signal, the second slew detection signal, and a feedback signal.

Abstract: A superjunction device comprising a drain contact, a substrate layer above the drain contact, an epitaxial layer above the substrate layer, a P+ layer above the epitaxial layer formed by P-type implantation to a bottom of the superjunction device, a trench with a sloped angle formed by use of a hard mask layer. The trench is filled with an insulating material. A first vertical column is formed adjacent to the trench. A second vertical column is formed adjacent to the first vertical column. A source contact is coupled to the first vertical column and the second vertical column. A P-body region is coupled to the source contact. A gate oxide is formed above the source contact and the epitaxial layer, and a gate formed above the gate oxide.

Abstract: A non-volatile memory including one or more EEPROM cell pairs. Each EEPROM cell pair includes three transistors and stores two data bits, effectively providing a 1.5 transistor EEPROM cell. An EEPROM cell pair includes a first non-volatile memory transistor connected to a first bit line, a second non-volatile memory transistor connected to a second bit line, and a source access transistor coupled to common source line. The source access transistor includes: a first diffusion region continuous with a source region of the first non-volatile memory transistor and a second diffusion region continuous with a source region of the second non-volatile memory transistor.

Abstract: A non-volatile memory including one or more EEPROM cell pairs. Each EEPROM cell pair includes three transistors and stores two data bits, effectively providing a 1.5 transistor EEPROM cell. An EEPROM cell pair includes a first non-volatile memory transistor connected to a first bit line, a second non-volatile memory transistor connected to a second bit line, and a source access transistor coupled to common source line. The source access transistor includes: a first diffusion region continuous with a source region of the first non-volatile memory transistor and a second diffusion region continuous with a source region of the second non-volatile memory transistor.

Abstract: A non-volatile memory including one or more EEPROM cell pairs. Each EEPROM cell pair includes three transistors and stores two data bits, effectively providing a 1.5 transistor EEPROM cell. An EEPROM cell pair includes a first non-volatile memory transistor, a second non-volatile memory transistor and a source access transistor. The source access transistor includes: a first source region continuous with a source region of the first non-volatile memory transistor; a second source region continuous with a source region of the second non-volatile memory transistor, and a third source region continuous with source regions of other non-volatile memory transistors located in the same row as the EEPROM cell pair.

Abstract: A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage VPP across the gate dielectric layers of the access transistors. As a result, the NVM cells can be scaled down to sub-0.35 micron geometries.

Abstract: A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage VPP across the gate dielectric layers of the access transistors. As a result, the NVM cells can be scaled down to sub-0.35 micron geometries.

Abstract: A non-volatile memory (NVM) system includes a set of NVM cells, each including: a NVM transistor; an access transistor coupling the NVM transistor to a corresponding bit line; and a source select transistor coupling the NVM transistor to a common source. The NVM cells are written by a two-phase operation that includes an erase phase and a program phase. A common set of bit line voltages are applied to the bit lines during both the erase and programming phases. The access transistors are turned on and the source select transistors are turned off during the erase and programming phases. A first control voltage is applied to the control gates of the NVM transistors during the erase phase, and a second control voltage is applied to the control gates of the NVM transistors during the program phase. Under these conditions, the average required number of Fowler-Nordheim tunneling operations is reduced.

Abstract: A nonvolatile memory integrated circuit arrayed in rows and columns is disclosed. Parallel lines of implant N-type regions are formed in a P-well of a semiconductor substrate, with lines of oxide material isolating each pair of the lines. Columns of memory cells straddle respective pairs of the implant region lines, with one line of the pair forming the source region and one line of the pair forming the drain region of each memory cell of the column. Each memory cell has a floating polysilicon storage gate. One of plural wordlines overlies each row of the memory cells. The portion of the wordline overlying each memory cells forms the control gate of the memory cell. Programming and erase operations occur by Fowler-Nordheim tunneling of electrons through a tunnel oxide layer between the floating gate and the source of the cell.

Abstract: A nonvolatile memory integrated circuit arrayed in rows and columns is disclosed. Parallel lines of implant N-type regions are formed in a P-well of a semiconductor substrate, with lines of oxide material isolating each pair of the lines. Columns of memory cells straddle respective pairs of the implant region lines, with one line of the pair forming the source region and one line of the pair forming the drain region of each memory cell of the column. Each memory cell has a floating polysilicon storage gate. One of plural wordlines overlies each row of the memory cells. The portion of the wordline overlying each memory cells forms the control gate of the memory cell. Programming and erase operations occur by Fowler-Nordheim tunneling of electrons through a tunnel oxide layer between the floating gate and the source of the cell.

Abstract: A voltage reference circuit provides a reference voltage in response to a programmed threshold voltage of a first non-volatile memory (NVM) transistor. The threshold voltage of the first NVM transistor is programmed by applying a programming voltage to commonly connected source/drain regions of a tunneling capacitor, which shares a floating gate with the first NVM transistor. During normal operation of the voltage reference circuit, the source/drain regions of the tunneling capacitor are connected to a second NVM transistor that has the same electrical and thermal characteristics as the floating gate of the first NVM transistor. As a result, charge loss from the floating gate of the first NVM transistor is advantageously minimized.

Abstract: A charge pump provides a programmable multiplication factor for generating an output voltage. A first output voltage may be generated by connecting a first plurality of N capacitors in a first plurality of (N+1) configurations. A second output voltage may be generated by connecting a second plurality of M capacitors in a second plurality of M+1 configurations. The first plurality of N capacitors and the second plurality of M capacitors have one or more capacitors in common. The integers M and N may be equal, although this is not required. The first plurality of configurations is different than the second plurality of configurations, thereby providing different multiplication factors for the first and second pluralities of configurations. In one embodiment, the first plurality of (N+1) configurations results in an output voltage of about 3/4× an input voltage.

Abstract: A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage VPP across the gate dielectric layers of the access transistors. As a result, the NVM cells can be scaled down to sub-0.35 micron geometries.

Abstract: A charge pump provides a multiplication factor of ? by using a three-phase mode of operation. In a first mode, first and second capacitors are charged from an input voltage while a third capacitor drives the output voltage based on stored charge in the third capacitor. In a second mode, the output terminal is connected to the common node of the first and second capacitors. In a third mode, the voltage potential across the second capacitor is subtracted from the sum of the input voltage and the voltage potential across the first capacitor to generate the output voltage. Operated in this manner, the first, second, and third capacitors will provide the desired ?× voltage multiplication. This relatively low multiplication factor can be beneficial in applications requiring 2.5V and 1.8V supplies for integrated circuits, particularly where the input voltage is provided by a lithium battery.