Abstract: A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm?TB?0.69×TE+105 nm; and 30 nm?TE?50 nm.

Abstract: A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm?TB?0.69×TE+105 nm; and 30 nm?TE?50 nm.

Abstract: An input device includes a plurality of first transparent electrodes, a plurality of second transparent electrodes, coupling portions each electrically connecting two adjacent second transparent electrodes of the second transparent electrodes, and bridge portions each electrically connecting two adjacent first transparent electrodes of the first transparent electrodes. The first and second transparent electrodes are arranged in directions orthogonal to each other and are formed of a material containing conductive nanowires. The bridge portions each include a bridge wiring part, an insulating layer, and a buffer layer. The buffer layer is disposed between each of the coupling portions and the insulating layer. The buffer layer is formed of a light-transmissive, inorganic oxide-based material.

Abstract: An input device includes a plurality of first transparent electrodes, a plurality of second transparent electrodes, coupling portions each electrically connecting two adjacent second transparent electrodes of the second transparent electrodes, and bridge portions each electrically connecting two adjacent first transparent electrodes of the first transparent electrodes. The first and second transparent electrodes are arranged in directions orthogonal to each other and are formed of a material containing conductive nanowires. The bridge portions each include a bridge wiring part, an insulating layer, and a buffer layer. The buffer layer is disposed between each of the coupling portions and the insulating layer. The buffer layer is formed of a light-transmissive, inorganic oxide-based material.