Abstract: A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

Abstract: A power-module substrate and a heat sink made of an aluminum-impregnated silicon carbide formed by impregnating aluminum in a porous body made of silicon carbide; where yield strength of a circuit layer is ?1 (MPa), a thickness of the circuit layer is t1 (mm), a bonding area of the circuit layer and a ceramic board is A1 (mm2), yield strength of a metal layer is ?2 (MPa), a thickness of the metal layer is t2 (mm), a bonding area of the metal layer and the ceramic board is A2 (mm2); the thickness t1 is formed to be between 0.1 mm and 3.0 mm (inclusive); the thickness t2 is formed to be between 0.15 mm and 5.0 mm (inclusive); the thickness t2 is formed larger than the thickness t1; and a ratio {(?2×t2×A2)/(?1×t1×A1)} is in a range between 1.5 and 15 (inclusive).

Abstract: A heat sink-attached power module substrate board has a ratio (A1×t1×?1×?1)/{(A2×t2×?2×?2)+(A3×t3×?3×?3)} at 25° C. is not less than 0.70 and not more than 1.30, where A1 (mm2) is a bonding area of a second layer and a first layer composing a circuit layer; t1 (mm) is an equivalent board thickness, ?1 (N/mm2) is yield strength, and ?1 (/K) is a linear expansion coefficient, all of the second layer, where A2 (mm2) is a bonding area of the heat radiation-side bonding material and the metal layer; t2 (mm) is equivalent board thickness, ?2 (N/mm2) is yield strength, and ?2 (/K) is a linear expansion coefficient, all of the heat radiation-side bonding material, and where A3 (mm2) is a bonding area of the heat sink and the heat radiation-side bonding material; t3 (mm) is equivalent board thickness, ?3 (N/mm2) is yield strength, and ?3 (/K) is a linear expansion coefficient, all of the heat sink.

Abstract: An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/° C.

Abstract: A power-module substrate constructed by disposing a metal layer and a circuit layer comprising copper on a ceramic board; an aluminum layer; a copper layer; and a heat sink comprising an aluminum-impregnated silicon carbide porous body, wherein diffusion layers having an intermetallic compound of aluminum and copper are formed between the metal layer and the aluminum layer, between the aluminum layer and the copper layer, and between the copper layer and the aluminum-impregnated silicon carbide porous body, also wherein the circuit layer has a thickness t1 of 0.1-3.0 mm, the meta layer has a thickness t2 of 0.1-3.0 mm, a thickness t3 is not more than 3.0 mm, a thickness t4 is between 0.1 mm and 5.0 mm, and the ratio [(?1×t1×A1)/{(?2×t2×A2)+(?3×t3×A3)+(?4×t4×A4)}] falls within the range of 0.06-0.70.

Abstract: A power-module substrate constructed by disposing a metal layer and a circuit layer comprising copper on a ceramic board; an aluminum layer; a copper layer; and a heat sink comprising an aluminum-impregnated silicon carbide porous body, wherein diffusion layers having an intermetallic compound of aluminum and copper are formed between the metal layer and the aluminum layer, between the aluminum layer and the copper layer, and between the copper layer and the aluminum-impregnated silicon carbide porous body, also wherein the circuit layer has a thickness t1 of 0.1-3.0 mm, the meta layer has a thickness t2 of 0.1-3.0 mm, a thickness t3 is not more than 3.0 mm, a thickness t4 is between 0.1 mm and 5.0 mm, and the ratio [(?1×t1×A1)/{(?2×t2×A2)+(?3×t3×A3)+(?4×t4×A4)}] falls within the range of 0.06-0.70.

Abstract: A heat sink-attached power module substrate board has a ratio (A1×t1×?1×?1)/{(A2×t2×?2×?2)+(A3×t3×?3×?3)} at 25° C. is not less than 0.70 and not more than 1.30, where A1 (mm2) is a bonding area of a second layer and a first layer composing a circuit layer; t1 (mm) is an equivalent board thickness, ?1 (N/mm2) is yield strength, and ?1 (/K) is a linear expansion coefficient, all of the second layer, where A2 (mm2) is a bonding area of the heat radiation-side bonding material and the metal layer; t2 (mm) is equivalent board thickness, ?2 (N/mm2) is yield strength, and ?2 (/K) is a linear expansion coefficient, all of the heat radiation-side bonding material, and where A3 (mm2) is a bonding area of the heat sink and the heat radiation-side bonding material; t3 (mm) is equivalent board thickness, ?3 (N/mm2) is yield strength, and ?3 (/K) is a linear expansion coefficient, all of the heat sink.

Abstract: A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

Abstract: An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/° C.

Abstract: A joined body manufacturing method includes: a laminating step for forming a laminated body in which either a copper circuit substrate (first member) or a ceramic substrate (second member) is coated beforehand with a temporary fixing material the main ingredient of which is a saturated fatty acid, the copper circuit substrate and the ceramic substrate are stacked and positioned by the temporary fixing material which has been melted, and by cooling the temporary fixing material the stacked copper substrate and ceramic substrate are temporarily fixed; and a joining step for forming a joined body in which the copper circuit substrate and the ceramic substrate are joined by heating with pressurizing the laminated body in the stacking direction.

Abstract: A power-module substrate and a heat sink made of an aluminum-impregnated silicon carbide formed by impregnating aluminum in a porous body made of silicon carbide; where yield strength of a circuit layer is ?1 (MPa), a thickness of the circuit layer is t1 (mm), a bonding area of the circuit layer and a ceramic board is A1 (mm2), yield strength of a metal layer is ?2 (MPa), a thickness of the metal layer is t2 (mm), a bonding area of the metal layer and the ceramic board is A2 (mm2); the thickness t1 is formed to be between 0.1 mm and 3.0 mm (inclusive); the thickness t2 is formed to be between 0.15 mm and 5.0 mm (inclusive); the thickness t2 is formed larger than the thickness t1; and a ratio {(?2×t2×A2)/(?1×t1×A1)} is in a range between 1.5 and 15 (inclusive).

Abstract: Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is ?11 (N/mm2), yield strength at 200° C. is ?12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is ?21 (N/mm2), and yield strength at 200° C. is ?22 (N/mm2) in the heat sink.

Abstract: A thermoelectric conversion module which is obtained by connecting a plurality of thermoelectric conversion elements via a pair of wiring substrates facing each other in such a state that the thermoelectric conversion elements are combined with each other between the wiring substrates: each of the wiring substrates is obtained by forming an electrode layer on one surface of a ceramic substrate, the electrode layer being connected to the thermoelectric conversion elements and being formed of aluminum or an aluminum alloy: at least the electrode layer that is arranged on the high-temperature side is provided with a silver base layer, in which a glass layer and a silver layer are laminated in the surface; and the silver layer of the silver base layer is bonded to the thermoelectric conversion elements.

Abstract: Preventing a deformation when a metal layer made of copper or copper alloy is brazed on an aluminum-made cooler, a power-module substrate with cooler having low thermal resistance and high bonding reliability is provided: a circuit layer made of copper or copper alloy is bonded on one surface of a ceramic board and a metal layer made of copper or copper alloy is bonded on the other surface of the ceramic board; a second metal layer made of aluminum or aluminum alloy is bonded to the metal layer by solid-phase diffusion; and a cooler made of aluminum alloy is brazed on the second metal layer with Al-based Mg-included brazing material.

Abstract: Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25° C. is ?11 (N/mm2), yield strength at 200° C. is ?12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25° C. is ?21 (N/mm2), and yield strength at 200° C. is ?22 (N/mm2) in the heat sink.

Abstract: A power-module substrate unit having at least one power-module substrate including one ceramic substrate, a circuit layer formed on one surface of the ceramic substrate, and a metal layer formed on another surface of the ceramic substrate, and a heat sink on which the metal layer of the power-module substrate is bonded, in which the metal layer is made of an aluminum plate having purity of 99.99 mass % or higher; the heat sink is made of an aluminum plate having purity of 99.90 mass % or lower; and the circuit layer has a stacking structure of a first layer made of an aluminum plate having the purity of 99.99 mass % or higher and being bonded to the ceramic substrate and a second layer made of the aluminum plate having the purity lower than 99.90 mass % and being bonded on a surface of the first layer.

Abstract: A maximum length of a heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink to a metal layer is deformed to be concave or the warp amount “Z” is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than ?0.005 and not larger than 0.005, and the ratio Z/L is in the range not smaller than ?0.005 and not larger than 0.005 even when it is heated to 280° C. and then cooled to 25° C.

Abstract: A carrier transport system transports a plurality of carriers by a transport conveyor into a heating furnace, advances a comb-shaped carrier stopper having a plurality of protrusions toward the carriers, moves the carriers by the transport conveyor in a transport direction to engage cutout grooves, provided respectively for the carriers, with the protrusions of the carrier stopper to thereby position the carriers at a time. The carrier transport system advances the carrier stopper toward the carriers to insert distal ends of the protrusions of the carrier stopper into insertion holes, and then determines, on the basis of a moved distance X of the carrier stopper, whether the carriers are properly positioned.

Abstract: In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

Abstract: Preventing a deformation when a metal layer made of copper or copper alloy is brazed on an aluminum-made cooler, a power-module substrate with cooler having low thermal resistance and high bonding reliability is provided: a circuit layer made of copper or copper alloy is bonded on one surface of a ceramic board and a metal layer made of copper or copper alloy is bonded on the other surface of the ceramic board; a second metal layer made of aluminum or aluminum alloy is bonded to the metal layer by solid-phase diffusion; and a cooler made of aluminum alloy is brazed on the second metal layer with Al-based Mg-included brazing material.