Patents by Inventor SOTIRIOS CHRISTODOULOU

SOTIRIOS CHRISTODOULOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220235263
    Abstract: The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.
    Type: Application
    Filed: May 25, 2020
    Publication date: July 28, 2022
    Applicants: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES, INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS
    Inventors: Gerasimos Konstantatos, Sotirios Christodoulou
  • Patent number: 9762033
    Abstract: Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: September 12, 2017
    Assignee: FONDAZIONE INSTITUTO ITALIANO DI TECHNOLOGIA
    Inventors: Iwan Philemon Wilhelmus Remy Roger Moreels, Joel Quedar Ge Tian Chi Grim, Sotirios Christodoulou, Francesco Di Stasio, Roman Mark Krahne, Liberato Manna, Roberto Cingolani
  • Publication number: 20170085058
    Abstract: Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism.
    Type: Application
    Filed: May 29, 2015
    Publication date: March 23, 2017
    Applicant: FONDAZION ISTITUTO ITALIANO DI TECNOLOGIA
    Inventors: IWAN PHILEMON WILHELMUS MOREELS, JOEL QUEDAR GE TIAN CHI GRIM, SOTIRIOS CHRISTODOULOU, FRANCESCO DI STASIO, ROMAN MARK KRAHNE, LIBERATO MANNA, ROBERTO CINGOLANI