Abstract: A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side.

Abstract: Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.

Abstract: Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

Abstract: A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.