Patents by Inventor Souhei Miyazaki

Souhei Miyazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Far-infrared emitter of high emissivity and corrosion resistance and method for the preparation thereof
    Patent number: 5338616
    Abstract: A far-infrared emitter of high corrosion resistance is prepared by an oxidizing heat treatment of a body made from a stainless steel of 20-35% by weight of chromium, 0.5-5.0% by weight of molybdenum, up to 3.0% by weight of manganese and up to 3.0% by weight of silicon at 900.degree.-1200.degree. C. to form an oxidized surface film having a thickness of at least 0.2 mg/cm.sup.2. Further, a far-infrared emitter of a high emissivity approximating a black body is prepared by subjecting a body made from a stainless steel of 10-35% by weight of chromium, 1.0-4.0% by weight of silicon and up to 3.0% by weight of manganese to a blasting treatment to roughen the surface followed by an oxidizing heat treatment at 900.degree.-1200.degree. C. to form an oxide film on the surface in the form of protrusions having a length of at least 5 .mu.m.
    Type: Grant
    Filed: April 8, 1993
    Date of Patent: August 16, 1994
    Assignees: Kawasaki Steel Corporation, Osaka Gas Co., Ltd.
    Inventors: Kazuhide Ishii, Tatsuo Kawasaki, Noriyuki Kuriyama, Shoji Dohi, Akio Nakashiba, Souhei Miyazaki
  • Ear-infrared emitter of high emissivity and corrosion resistance and method for the preparation thereof
    Patent number: 5213629
    Abstract: A far-infrared emitter of high corrosion resistance is prepared by an oxidizing heat treatment of a body made from a stainless steel of 20-35% by weight of chromium, 0.5-5.0% by weight of molybdenum, up to 3.0% by weight of manganese and up to 3.0% by weight of silicon at 900.degree.-1200 .degree. C. to form an oxidized surface film having a thickness of at least 0.2 mg/cm.sup.2. Further, a far-infrared emitter of a high emissivity approximating a black body is prepared by subjecting a body made from a stainless steel of 10-35% by weight of chromium, 1.0-4.0% by weight of silicon and up to 3.0% by weight of manganese to a blasting treatment to roughen the surface followed by an oxidizing heat treatment at 900.degree.-1200 .degree. C. to form an oxide film on the surface in the form of protrusions having a length of at least 5 .mu.m.
    Type: Grant
    Filed: May 1, 1992
    Date of Patent: May 25, 1993
    Assignees: Kasasaki Steel Corporation, Osaka Gas Co., Ltd.
    Inventors: Kazuhide Ishii, Tatsuo Kawasaki, Noriyuki Kuriyama, Shoji Dohi, Akio Nakashiba, Souhei Miyazaki