Abstract: A grinding apparatus including a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle, a touch panel, and a control portion. The control portion is adapted to compare the information regarding the target sectional shape input into a target shape input field with the information regarding the present sectional shape input into a present shape input field and then control the inclination adjusting unit to change the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target sectional shape of the wafer.

Abstract: A wafer grinding method includes grinding a central portion of a wafer by using a plurality of abrasive members annularly arranged so as to form a circular ring, thereby forming a circular recess at the central portion of the wafer and simultaneously forming an annular projection around the circular recess, recognizing a height of a grinding unit after grinding the center by using a height recognizing unit and next storing the height recognized above, and grinding an upper surface of the annular projection to a predetermined value for a height of the annular projection previously set by a setting section as a grinding end height where the grinding of the annular projection by the grinding unit is ended.

Abstract: A processing apparatus includes a first distinguishing display unit which, when a mechanism making a holding force or a processing force act on a workpiece causes an error, displays a workpiece illustration representing the workpiece to which the error is caused and on which the holding force or the processing force acts distinguishably from another workpiece illustration. The workpiece on which the holding force or the processing force of the mechanism causing the error acts can be thereby identified easily.

Abstract: A method of grinding a substrate includes grinding the substrate to a larger depth at an outer circumferential portion of the substrate than at a central portion of the substrate by keeping an annular grindstone assembly of a grinding unit and the substrate in abrasive contact with each other while a portion of a holding surface of a chuck table underlying an area of contact between the annular grindstone assembly and the substrate is lying not parallel to a grinding surface defined by a lower surface of the annular grindstone assembly, lifting the grinding unit to separate the annular grindstone assembly from the substrate, and, grinding the substrate by keeping again the annular grindstone assembly and the substrate in abrasive contact with each other by lowering the grinding unit while the portion of the holding surface is lying parallel to the grinding surface.

Abstract: A method of grinding a workpiece is carried out by a grinding apparatus including a spindle for rotating a grinding wheel, a servomotor for moving the spindle, and a servo driver for sending signals to the servomotor. The method includes a depth-of-cut command issuing step of issuing a command representing a projected depth of cut to the servo driver and a grinding step of grinding the workpiece. In the grinding step, the servo driver finishes movement of the spindle when the spindle has moved by a target distance corresponding to the projected depth of cut.

Abstract: A grinding apparatus including a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle, a touch panel, and a control portion. The control portion is adapted to compare the information regarding the target sectional shape input into a target shape input field with the information regarding the present sectional shape input into a present shape input field and then control the inclination adjusting unit to change the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target sectional shape of the wafer.

Abstract: A grinding apparatus includes a loading unit for loading a wafer to a chuck table having a holding surface for holding the wafer, an unloading unit for unloading the wafer from the chuck table, and a cleaning unit for cleaning the holding surface of the chuck table or the upper surface of the wafer held on the holding surface of the chuck table. The cleaning unit includes a cleaning portion and a horizontal moving portion for horizontally moving the cleaning portion in a lateral direction of the grinding apparatus. The loading unit has a first holding portion for holding the wafer, and the unloading unit has a second holding portion for holding the wafer.

Abstract: A processing apparatus includes a first distinguishing display unit which, when a mechanism making a holding force or a processing force act on a workpiece causes an error, displays a workpiece illustration representing the workpiece to which the error is caused and on which the holding force or the processing force acts distinguishably from another workpiece illustration. The workpiece on which the holding force or the processing force of the mechanism causing the error acts can be thereby identified easily.

Abstract: A wafer grinding method includes grinding a central portion of a wafer by using a plurality of abrasive members annularly arranged so as to form a circular ring, thereby forming a circular recess at the central portion of the wafer and simultaneously forming an annular projection around the circular recess, recognizing a height of a grinding unit after grinding the center by using a height recognizing unit and next storing the height recognized above, and grinding an upper surface of the annular projection to a predetermined value for a height of the annular projection previously set by a setting section as a grinding end height where the grinding of the annular projection by the grinding unit is ended.