Abstract: A substrate inspection apparatus includes a laser light source configured to emit a laser beam, an optical splitter configured to split the laser beam into a first laser beam and a second laser beam, a delay stage configured to change a relative time delay of the second laser beam and optically connected to the optical splitter, a first modulator optically connected to the optical splitter and configured to change the first laser beam, and a feedback system configured to sense the second laser beam reflected from a substrate and configured to apply electrical feedback to the first modulator.

Abstract: A semiconductor substrate inspection device is provided and includes: a function generator that generates a first signal and a second signal; an ultrasonic generator that receives the first signal generated from the function generator, generates an ultrasonic wave based on the first signal, and generates a surface wave signal on an upper surface of a substrate using the ultrasonic wave; and an electron beam measurer that inspects the surface wave signal, wherein the electron beam measurer includes: a laser light source that receives the second signal generated from the function generator and generates a first pulse laser beam based on the second signal; an electron beam generator that receives the first pulse laser beam and generates an electron beam that is emitted onto the upper surface of the substrate; and a backscattered electron detector that detects backscattered electrons generated based on the electron beam being incident on the substrate.

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.

Abstract: A critical dimension prediction system includes a measuring device configured to acquire sample data from a sample semiconductor chip, the sample data including a plurality of spectrums, a training data selection device configured to select a training data set based on the sample data, a critical dimension predicting model generating device configured to generate a critical dimension predicting model by training an artificial intelligence model based on the training data set, and a critical dimension predicting device configured to predict a critical dimension of a target layer by inputting input data into the critical dimension predicting model, the input data including information about the target layer, where the training data selection device is further configured to assign a sparsity score to each of the plurality of spectrums and select at least one of the plurality of spectrums as the training data set based on the sparsity score.

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Abstract: A wafer measurement apparatus includes an electronic-optical system configured to irradiate a wafer with an electron beam and acquire a raw signal by detecting electrons emitted by the wafer, and an image processing device configured to convert the raw signal acquired by the electronic-optical system into image data. The electronic-optical system includes a detector configured to acquire the raw signal. The detector calibrates a gain offset using a difference in electron emission yields of different materials.

Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Abstract: A spectroscopic device may include a light source part configured to emit a first light toward a target object, the light source part including a main light source and a plurality of auxiliary light sources, a diffraction part including a diffraction grating configured to diffract a second light that is produced based on the first light being reflected from the target object, the diffraction grating configured to produce a third light that is the diffracted second light, a detection part configured to detect the third light, and an analyzing part connected to the detection part. The detection part may include a plurality of pixels and an actuator. The plurality of auxiliary light sources may be configured to emit light rays of different wavelengths. The actuator may be configured to rotate and move the detection part.

Abstract: A scanning electron microscope (SEM) includes an electron gun, a deflector, an objective lens, first and second detectors each configured to detect emission electrons emitted from the wafer based on the input electron beam being irradiated on the wafer, a first energy filter configured to block electrons having energy less than a first energy among emission electrons emitted from a wafer based on an input electron beam from being detected by the first detector, and a second energy filter configured to block electrons having energy less than second energy among the emission electrons from being detected by the second detector.

Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.

Abstract: A semiconductor pattern detecting apparatus is provided.

Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.

Abstract: A semiconductor pattern detecting apparatus is provided.

Abstract: Disclosed are a measuring apparatus and a substrate analysis method using the same. The measuring apparatus includes a light source that generates a laser beam, a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam, an antenna that receives the probe laser beam to produce a terahertz beam, an electro-optical device that receives the reference laser beam and the terahertz beam to change a vertical polarization component and a horizontal polarization component of the reference laser beam, based on intensity of the terahertz beam, and a streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component.

Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal.