Patents by Inventor Souk KIM
Souk KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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METHOD OF INSPECTING TIP OF ATOMIC FORCE MICROSCOPE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Publication number: 20230194567Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.Type: ApplicationFiled: August 1, 2022Publication date: June 22, 2023Applicants: Samsung Electronics Co., Ltd., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kwangeun Kim, Seungbum Hong, Sungyoon Ryu, Hoon Kim, Jiwon Yeom, Seokjung Yun, Souk Kim, Younghoon Sohn, Yusin Yang -
Publication number: 20230154804Abstract: A spectroscopic device may include a light source part configured to emit a first light toward a target object, the light source part including a main light source and a plurality of auxiliary light sources, a diffraction part including a diffraction grating configured to diffract a second light that is produced based on the first light being reflected from the target object, the diffraction grating configured to produce a third light that is the diffracted second light, a detection part configured to detect the third light, and an analyzing part connected to the detection part. The detection part may include a plurality of pixels and an actuator. The plurality of auxiliary light sources may be configured to emit light rays of different wavelengths. The actuator may be configured to rotate and move the detection part.Type: ApplicationFiled: August 25, 2022Publication date: May 18, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jaeho KIM, Souk KIM, Younghoon SOHN
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Publication number: 20230140892Abstract: A scanning electron microscope (SEM) includes an electron gun, a deflector, an objective lens, first and second detectors each configured to detect emission electrons emitted from the wafer based on the input electron beam being irradiated on the wafer, a first energy filter configured to block electrons having energy less than a first energy among emission electrons emitted from a wafer based on an input electron beam from being detected by the first detector, and a second energy filter configured to block electrons having energy less than second energy among the emission electrons from being detected by the second detector.Type: ApplicationFiled: August 2, 2022Publication date: May 11, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jaehyung AHN, Kwangeun KIM, Souk KIM, Younghoon SOHN
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Publication number: 20230079008Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.Type: ApplicationFiled: April 12, 2022Publication date: March 16, 2023Inventors: Hyunchul Kim, Souk Kim, Younghoon Sohn
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Publication number: 20220404395Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.Type: ApplicationFiled: April 15, 2022Publication date: December 22, 2022Applicant: Korea Advanced Institute of Science and TechnologyInventors: Sungyoon RYU, Seungbum HONG, Kwangeun KIM, Hoon KIM, Jiwon YEOM, Seokjung YUN, Souk KIM, Younghoon SOHN, Yusin YANG
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Patent number: 11181831Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.Type: GrantFiled: September 3, 2019Date of Patent: November 23, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyoung-hwan Lee, Young-ho Kwon, Souk Kim, Young-hoon Sohn, Yu-sin Yang
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Patent number: 11017525Abstract: A semiconductor pattern detecting apparatus is provided.Type: GrantFiled: August 15, 2019Date of Patent: May 25, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyung Ahn, Souk Kim, Joon Seo Song, Young Hoon Sohn, Yu Sin Yang
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Patent number: 11004712Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.Type: GrantFiled: August 6, 2019Date of Patent: May 11, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Yoon Ryu, Joonseo Song, Souk Kim, Younghoon Sohn, Yusin Yang, Chihoon Lee
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Publication number: 20200194317Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.Type: ApplicationFiled: September 3, 2019Publication date: June 18, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Kyoung-hwan Lee, Young-ho Kwon, Souk Kim, Young-hoon Sohn, Yu-Sin Yang
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Publication number: 20200182783Abstract: Disclosed are a measuring apparatus and a substrate analysis method using the same. The measuring apparatus includes a light source that generates a laser beam, a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam, an antenna that receives the probe laser beam to produce a terahertz beam, an electro-optical device that receives the reference laser beam and the terahertz beam to change a vertical polarization component and a horizontal polarization component of the reference laser beam, based on intensity of the terahertz beam, and a streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component.Type: ApplicationFiled: September 10, 2019Publication date: June 11, 2020Inventors: Sunhong JUN, Sung Yoon RYU, Souk KIM, Younghoon SOHN, Yusin YANG
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Publication number: 20200184618Abstract: A semiconductor pattern detecting apparatus is provided.Type: ApplicationFiled: August 15, 2019Publication date: June 11, 2020Inventors: Jae Hyung AHN, Souk KIM, Joon Seo SONG, Young Hoon SOHN, Yu Sin YANG
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Publication number: 20200176292Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.Type: ApplicationFiled: August 6, 2019Publication date: June 4, 2020Applicant: Samsung Electronics Co,Ltd.Inventors: Sung Yoon RYU, Joonseo SONG, Souk KIM, Younghoon SOHN, Yusin YANG, Chihoon LEE
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Patent number: 10410937Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal.Type: GrantFiled: July 16, 2018Date of Patent: September 10, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jang Ik Park, Bong Seok Kim, Souk Kim, Yu Sin Yang, Soo Seok Lee
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Patent number: 10373796Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.Type: GrantFiled: March 29, 2016Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Souk Kim, Chung-sam Jun, Woo-seok Ko, Sang-kil Lee, Kwang-il Shin, Yu-sin Yang, Min-chul Yoon
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Publication number: 20190181062Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal.Type: ApplicationFiled: July 16, 2018Publication date: June 13, 2019Inventors: Jang Ik PARK, Bong Seok KIM, Souk KIM, Yu Sin YANG, Soo Seok LEE
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Patent number: 9583402Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.Type: GrantFiled: July 9, 2015Date of Patent: February 28, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Yoon Ryu, Wooseok Ko, Souk Kim, Yusin Yang, Sangkil Lee, Chungsam Jun, Kwanwoo Ryu
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Patent number: 9517177Abstract: A sauna apparatus for a half-body bath including a body having a concave structure surrounded with a bottom surface located horizontally on the ground and at least three surfaces connected to the bottom surface. The sauna apparatus also includes a first heating part and a seat disposed at the inside thereof. The sauna apparatus further includes a cover connected on top of the body that is movable-up and down to open and close the interior of the body. The sauna apparatus also includes a second heating part in the cover and shock absorbers to connect the body and the cover with each other. In addition, the sauna apparatus includes a seat driving part to move the seat in an advancing or opposite direction.Type: GrantFiled: June 10, 2015Date of Patent: December 13, 2016Assignee: NEWGENSAUNA CO., LTD.Inventors: Se Jung Oh, Min Souk Kim
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Publication number: 20160293379Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.Type: ApplicationFiled: March 29, 2016Publication date: October 6, 2016Inventors: Souk Kim, Chung-sam Jun, Woo-seok Ko, Sang-Kil Lee, Kwang-il Shin, Yu-sin Yang, Min-chul Yoon
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Patent number: 9417055Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.Type: GrantFiled: July 14, 2015Date of Patent: August 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon Ryu, Sang-Kil Lee, Chung-Sam Jun, Woo-Seok Ko, Ho-Jeong Kwak, Souk Kim, Kwan-Woo Ryu, Yu-Sin Yang
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Publication number: 20160081875Abstract: The present invention relates to a sauna apparatus for a half-body bath including: a body having a concave structure surrounded with a bottom surface located horizontally on the ground and at least three surfaces connected to the bottom surface and comprising a first heating part and a seat disposed at the inside thereof; a cover connectedly placed on top of the body in such a manner as to move up and down by a force applied thereto to open and close the interior of the body and having a second heating part disposed at the inside thereof; shock absorbers adapted to connect the body and the cover with each other; and a seat driving part adapted to generate power according to input signals applied thereto to move the seat in an advancing direction or in an opposite direction to the advancing direction.Type: ApplicationFiled: June 10, 2015Publication date: March 24, 2016Inventors: Se Jung Oh, Min Souk Kim