Patents by Inventor Sousuke OOSAWA

Sousuke OOSAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION AND PRODUCTION METHOD THEREOF
    Publication number: 20200333707
    Abstract: A resist pattern-forming method includes applying a radiation-sensitive composition directly or indirectly on a substrate to form a resist film. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film is developed after the exposing. The radiation-sensitive composition includes a first complex, a compound and a second complex. The first complex includes a metal atom and a first ligand coordinating to the metal atom. The compound gives a second ligand that differs from the first ligand. The second complex includes the metal atom and the second ligand coordinating to the metal atom.
    Type: Application
    Filed: April 21, 2020
    Publication date: October 22, 2020
    Applicant: JSR CORPORATION
    Inventors: Miki Tamada, Sousuke Oosawa, Ken Maruyama
  • Resist pattern-forming method
    Patent number: 10564546
    Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: February 18, 2020
    Assignee: JSR CORPORATION
    Inventors: Tomohiko Sakurai, Sousuke Oosawa, Hiromitsu Nakashima, Kousuke Terayama
  • RESIST PATTERN-FORMING METHOD
    Publication number: 20170329228
    Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.
    Type: Application
    Filed: May 11, 2017
    Publication date: November 16, 2017
    Applicant: JSR CORPORATION
    Inventors: Tomohiko SAKURAI, Sousuke OOSAWA, Hiromitsu NAKASHIMA, Kousuke TERAYAMA