Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A compound having the formula: wherein n, y, R1 and R2 are defined herein, and others, methods of making of and using, and compositions made thereby which have an antimicrobial resistance effect are described.

Abstract: A compound having the formula: wherein n, y, R1 and R2 are defined herein, and others, methods of making of and using, and compositions made thereby which have an antimicrobial resistance effect are described.

Abstract: A monolithic, self-stratifying polymer coating, comprising: inner and outer-most surfaces on opposite sides of the coating, the inner surface being in contact with and adhered to an article; a surface region, extending from the outermost surface to a depth of about 2 nm from the outermost surface; a middle region, extending from a depth of about 2 nm from the outermost surface to a depth of less than about 2000 nm from the outermost surface; and a bulk region, extending from a depth of less than about 2000 nm from the outermost surface to the inner surface; wherein the surface region comprises a fluorous polyoxetane having the formula: (I) wherein n is an integer of 0-1 1, and m is an integer>0, in a greater concentration relative to the middle and bulk regions; wherein the middle region comprises 3F-SiO1.5 groups in a greater concentration relative to the surface and bulk regions; and wherein the bulk region comprises a polyurethane in a greater concentration relative to the surface and middle regions.

Abstract: A compound having the formula: wherein n, y, R1 and R2 are defined herein, and others, methods of making of and using, and compositions made thereby which have an antimicrobial resistance effect are described.

Abstract: The invention provides new nanoparticles that include a Group 4 metal oxide core and a coating surrounding the core, where the coating contains a ligand according to Formula (I), or a carboxylate thereof. The invention also provides new photoresist compositions that include a photoacid generator and a ligand acid or carboxylate thereof, where pKaPAG is lower than pKaLA. Methods for patterning a substrate using the inventive photoresist composition are also provided.

Abstract: A monolithic, self-stratifying polymer coating, comprising: inner and outer-most surfaces on opposite sides of the coating, the inner surface being in contact with and adhered to an article; a surface region, extending from the outermost surface to a depth of about 2 nm from the outermost surface; a middle region, extending from a depth of about 2 nm from the outermost surface to a depth of less than about 2000 nm from the outermost surface; and a bulk region, extending from a depth of less than about 2000 nm from the outermost surface to the inner surface; wherein the surface region comprises a fluorous polyoxetane having the formula: (I) wherein n is an integer of 0-1 1, and m is an integer>0, in a greater concentration relative to the middle and bulk regions; wherein the middle region comprises 3F-SiO1.5 groups in a greater concentration relative to the surface and bulk regions; and wherein the bulk region comprises a polyurethane in a greater concentration relative to the surface and middle regions.

Abstract: A compound having the formula: wherein n, y, R1 and R2 are defined herein, and others, methods of making of and using, and compositions made thereby which have an antimicrobial resistance effect are described.