Patents by Inventor Sovannary Phok

Sovannary Phok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140100112
    Abstract: Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. As exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. An exemplary article may comprise a biaxially textured base material, and at least one biaxially textured layer selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer is formed by electrodeposition on the biaxially textured base material.
    Type: Application
    Filed: October 16, 2013
    Publication date: April 10, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Raghu N. BHATTACHARYA, Sovannary PHOK, Priscila SPAGNOL, Tapas CHAUDHURI
  • Patent number: 8586506
    Abstract: Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. An exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinide, lanthanides, and oxides thereof. An exemplary article (150) may comprise a biaxially textured base material (130), and at least one biaxially textured layer (110) selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer (110) is formed by electrodeposition on the biaxially textured base material (130).
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: November 19, 2013
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Raghu N. Bhattacharya, Sovannary Phok, Priscila Spagnol, Tapas Chaudhuri
  • Patent number: 8513050
    Abstract: A Bi—Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: August 20, 2013
    Assignee: U.S. Department of Energy
    Inventors: Raghu Nath Bhattacharya, Sovannary Phok, Philip Anthony Parilla
  • Publication number: 20100167084
    Abstract: Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. An exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinide, lanthanides, and oxides thereof. An exemplary article (150) may comprise a biaxially textured base material (130), and at least one biaxially textured layer (110) selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer (110) is formed by electrodeposition on the biaxially textured base material (130).
    Type: Application
    Filed: August 1, 2005
    Publication date: July 1, 2010
    Applicant: Midwest Research Institute
    Inventors: Raghu N. Bhattacharya, Sovannary Phok, Priscila Spagnol, Tapas Chaudhuri