Abstract: The present invention relates generally to the field of semiconductor device manufacturing and more specifically to the manufacture and certification of semiconductor processing equipment. Systems and methods are described that establish a baseline contamination levels at each stage of the manufacture, assembly, testing, and installation of a process chamber.

Abstract: A gas-panel manifold for use in a gas-panel assembly is disclosed. A manifold in the assembly provides a plurality of support surfaces, each designed for supporting a gas-component thereon, and internal passageways disposed within the manifold body for connecting gas components, with such carried on the manifold, for gas flow through the manifold in a generally downstream direction. The adjacent support surfaces in the manifold are in different planes, representing different heights above the support.

Abstract: The invention involves the introduction of a gas-flow restrictor and reservoir upstream of a mass flow controller (MFC) in a gas-panel stick. The restrictor and reservoir components function to smooth out pressure spikes in the gas line, thus preventing gas-flow irregularities that can occur in an MFC or pressure-insensitive MFC. The restrictor and reservoir components can be integrated into the MFC.

Abstract: A catalytic reactor apparatus produces high purity water vapor by reacting hydrogen and oxygen together within a catalytic reaction chamber. The reactants and an inert gas, such as argon gas or nitrogen, are supplied to the catalytic reaction chamber in a controlled fashion by a gas panel. The cylindrical catalytic reaction chamber is preferably constructed of titanium or stainless steel. The catalytic reaction chamber is filled with high purity ceramic pellets of a nonreactive material coated with a catalyst, such a noble metal catalyst. Screens at each end of the reaction chamber prevent the catalyst pellets from being transported outside reaction chamber. The interior of the reaction chamber has two perpendicular baffle plates traversing the length to increase contact area with the catalytic pellets for electrical charge and thermal transport during the reaction. The temperature of the reaction chamber is maintained below 350 C during operation.

Abstract: The present invention provides a processing apparatus having multiple systems, and multiple components in each system. The apparatus includes a monitoring capability for monitoring the components and calculating a Health Index of each system, based on aggregate component performances of the components. The computer may initiate a trouble-shooting routine on components of a system if the Health Index of the system is below a preselected threshold value relative to a signature Health Index of the system. Also disclosed is a method for monitoring the performance characteristics of components in a multi-component chemical-delivery system.

Abstract: An improved valve device, a valved process-gas apparatus, and a method for confirming operations in a gas-process system are disclosed. The valve device includes an electronically controlled valve designed to cycle between closed and open conditions, with closed-to-open and open-to-closed response times less than about 250 ms, to control the flow of a gas through the valve. A sensor disposed at the downstream side of the valve is operable to (i) detect the presence of at least a threshold amount of gas during the period of the valve's closed-to-open response, and (ii) to detect the absence of at least a threshold amount of gas after the period of the valve's open-to-closed response, thus confirming successful operation of the valve.

Abstract: A catalytic reactor apparatus produces high purity water vapor by reacting hydrogen and oxygen together within a catalytic reaction chamber. The reactants and an inert gas, such as argon gas or nitrogen, are supplied to the catalytic reaction chamber in a controlled fashion by a gas panel. The cylindrical catalytic reaction chamber is preferably constructed of titanium or stainless steel. The catalytic reaction chamber is filled with high purity ceramic pellets of a nonreactive material coated with a catalyst, such a noble metal catalyst. Screens at each end of the reaction chamber prevent the catalyst pellets from being transported outside reaction chamber. The interior of the reaction chamber has two perpendicular baffle plates traversing the length to increase contact area with the catalytic pellets for electrical charge and thermal transport during the reaction. The temperature of the reaction chamber is maintained below 350 C. during operation.

Abstract: An improved method for welding and passivation forms a chromium oxide passivated film over the welded portion during the welding process. In a shielding step, a backshield gas, preferably argon, is flowed around the welding site. In a welding step, an arc gas, preferably argon with approximately 10% hydrogen and less than 1 ppm moisture content, is flowed through the welding head and a welded joint is formed, for example by high speed tungsten-inert gas (TIG) orbital welding. In the passivation step, a process gas, preferably argon with approximately 30-100 ppm of oxygen and less than 1 ppm moisture content, and preferably less than 1 ppb moisture content, is flowed over the welded portion to form a chromium oxide passivated film on the welded portion. The process gas is passed through a gas purifier prior to being flowed over the welded portion to maintain its moisture level at less than 1 ppb.

Abstract: An improved method for welding and passivation forms a chromium oxide passivated film over the welded portion during the welding process. In a shielding step, a backshield gas, preferably argon, is flowed around the welding site. In a welding step, an arc gas, preferably argon with approximately 10% hydrogen and less than 1 ppm moisture content, is flowed through the welding head and a welded joint is formed, for example by high speed tungsten-inert gas (TIG) orbital welding. In the passivation step, a process gas, preferably argon with approximately 30-100 ppm of oxygen and less than 1 ppm moisture content, and preferably less than 1 ppb moisture content, is flowed over the welded portion to form a chromium oxide passivated film on the welded portion. The process gas is passed through a gas purifier prior to being flowed over the welded portion to maintain its moisture level at less than 1 ppb.