Abstract: The present disclosure provides a substrate processing technology with good in-plane uniformity. A plasma processing method according to the present disclosure includes: disposing a substrate on a substrate support, supplying a processing gas, into the chamber, for processing the substrate, forming a plasma of the processing gas between the upper electrode and the lower electrode by supplying a first RF having a first frequency to an upper electrode or a lower electrode, and controlling an electric field formed between the upper electrode or the lower electrode and the plasma by supplying a second RF having a second frequency lower than the first frequency to the upper electrode or the lower electrode, in which the step of forming the plasma includes controlling the supply of the first RF based on a phase of the second RF.

Abstract: A prediction method includes a calculation process and a prediction process. The calculation process calculates a correlation between a spatial distribution value of a magnetic field in a chamber when a plasma etching process is performed on a substrate disposed in the chamber, and a process result of the plasma etching process on the substrate. The prediction process predicts the process result of the plasma etching process on the substrate from the spatial distribution value of the magnetic field in the chamber based on the calculated correlation.

Abstract: The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

Abstract: An apparatus includes a chamber, a reactive gas supply unit, an inert gas supply unit, a power source, a light reception unit, and a control unit configured to control at least one of a flow rate of the reactive gas and a flow rate of inert gas in such a manner that an intensity of the light approaches a target light intensity with use of a predetermined function in which an output of the power source in a compound mode and an output of the power source in a transition mode, and a film formation speed are associated with each other.