Abstract: According to the present invention, there is provided a method of manufacturing a metal and metal nitride using a single-step nitridation-exsolution synthetic method, including synthesizing metal-substituted metal oxide nanoparticles (S100); synthesizing metal-substituted metal oxide nanowires through hydrothermal synthesis of the metal-substituted metal oxide nanoparticles (S200); and obtaining a metal nitride and exsolved metal through ammonia treatment of the metal-substituted metal oxide nanowires (S300).

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.