Patents by Inventor Soyeong GWAK

Soyeong GWAK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230307062
    Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.
    Type: Application
    Filed: May 31, 2023
    Publication date: September 28, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soyeong GWAK, Raeyoung LEE, Jinkyu KANG, Sejun PARK, Changhwan SHIN, Jaeduk LEE, Woojae JANG
  • Patent number: 11699490
    Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: July 11, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soyeong Gwak, Raeyoung Lee, Jinkyu Kang, Sejun Park, Changhwan Shin, Jaeduk Lee, Woojae Jang
  • Publication number: 20220051727
    Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.
    Type: Application
    Filed: April 1, 2021
    Publication date: February 17, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soyeong GWAK, Raeyoung LEE, Jinkyu KANG, Sejun PARK, Changhwan SHIN, Jaeduk LEE, Woojae JANG
  • Patent number: 10726931
    Abstract: A method of operating a memory controller, the memory controller configured to control a nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks. The method including detecting an invalid block among the plurality of memory blocks; determining an invalid pattern based on a state of the invalid block; and performing an operation on the invalid block such that the invalid block has the invalid pattern.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: July 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Raeyoung Lee, Hyunjung Kim, Sung-Bok Lee, Soyeong Gwak, Sang-wan Nam
  • Publication number: 20190129655
    Abstract: A method of operating a memory controller, the memory controller configured to control a nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks. The method including detecting an invalid block among the plurality of memory blocks; determining an invalid pattern based on a state of the invalid block; and performing an operation on the invalid block such that the invalid block has the invalid pattern.
    Type: Application
    Filed: June 29, 2018
    Publication date: May 2, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Raeyoung LEE, Hyunjung KIM, Sung-Bok LEE, Soyeong GWAK, Sang-wan NAM
  • Publication number: 20160118126
    Abstract: A program method of a nonvolatile memory device is provided which includes programming memory cells to a target state using a verification voltage and an incremental step pulse, selecting memory cells, each having a threshold voltage lower than a supplementary verification voltage, from among the memory cells programmed to the target state, and applying a supplementary program voltage to the selected memory cells. The supplementary verification voltage is equal to or higher than the verification voltage, and the supplementary program voltage is equal to or lower than a program voltage provided in a program loop where a programming of the memory cells to the target state is completed.
    Type: Application
    Filed: September 15, 2015
    Publication date: April 28, 2016
    Inventors: Sungsu Moon, Changsub LEE, Raeyoung LEE, Soyeong GWAK