Abstract: A display apparatus can include a flexible substrate including a penetrating hole, a first thin film transistor including a first semiconductor layer, a second thin film transistor including a second semiconductor layer, and a first planarization layer on the first and second thin film transistors. The display apparatus can include a connection electrode on the first planarization layer electrically connected to the first or second thin film transistor, a second planarization layer on the first planarization layer, a first electrode on the second planarization layer electrically connected to the connection electrode, and a bank layer on the second planarization layer exposing a portion of the first electrode. The display apparatus includes a light-emitting layer on the portion of the first electrode exposed by the bank layer, the light-emitting layer including an emission material layer between first and second organic layers, and a second electrode on the light-emitting layer.

Abstract: A display apparatus can include a buffer layer on a flexible substrate; a first thin film transistor on the buffer layer including a first semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode, a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode, and a passivation layer on the first and the second thin film transistors. Also, the display apparatus includes a planarization layer, a light-emitting device including a first electrode, a light-emitting layer and a second electrode on the planarization layer, and an encapsulating element on the light-emitting device. Also, the light-emitting device is electrically connected to the first thin film transistor, the first semiconductor pattern includes silicon, and the second semiconductor pattern includes an oxide semiconductor pattern, and the second gate electrode includes lower and upper electrodes.

Abstract: A display device includes a substrate, first thin film transistors and second thin film transistors. A gate line is formed integrally with a first gate electrode of the first thin film transistors. An isolation insulating layer is disposed over a first gate insulating layer of the first thin film transistors. A second active layer of the second thin film transistors is disposed on the isolation insulating layer. An overlap pattern is disposed on the isolation insulating layer to be connected to the gate line. The overlap pattern includes a first overlap pattern disposed on the isolation insulating layer and formed of substantially the same material as the second active layer. A second overlap pattern is disposed on the first overlap pattern.

Abstract: A display apparatus is provided. The display apparatus can include a substrate hole penetrating a device substrate, light-emitting devices spaced away from the substrate hole, and at least one separating device between the substrate hole and the light-emitting devices. Each of the light-emitting devices can include a light-emitting layer between a first electrode and a second electrode. The separating device can surround the substrate hole. The separating device can include at least one under-cut structure. The under-cut structure can include a depth and a length, which are larger than a thickness of the light-emitting layer. Thus, in the display apparatus, the damage of the light-emitting devices due to external moisture permeating through the substrate hole can be prevented.

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

Abstract: The present disclosure provides a display apparatus, a display panel and a method for manufacturing the same. The display panel includes a substrate including a display area including a plurality of sub-pixels, and a gate driving area including a gate driving circuit, a first buffer layer contacting the substrate in the gate driving area, a second thin film transistor disposed in the gate driving area while including a second semiconductor layer made of a second semiconductor, a second buffer layer disposed at a first opening exposing the substrate in the display area while contacting the substrate, and a first thin film transistor disposed at the first opening in the display area while including a first semiconductor layer made of a first semiconductor different from the second semiconductor.

Abstract: Disclosed is a display device having improved reliability. The display device includes a first transistor disposed on a substrate, an electrical property of the first transistor being shifted from a first initial value in a decreasing direction; a second transistor disposed on the substrate, an electrical property of the second transistor being shifted from a second initial value in an increasing direction; and a first upper barrier conductive layer disposed so as to overlap a first active layer of the first transistor and not to overlap a second active layer of the second transistor, whereby reliability of each of the first and second transistors is improved.

Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.

Abstract: A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.

Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconduc

Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.

Abstract: A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.

Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconduc

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Abstract: A display device includes a substrate, first thin film transistors and second thin film transistors. A gate line is formed integrally with a first gate electrode of the first thin film transistors. An isolation insulating layer is disposed over a first gate insulating layer of the first thin film transistors. A second active layer of the second thin film transistors is disposed on the isolation insulating layer. An overlap pattern is disposed on the isolation insulating layer to be connected to the gate line. The overlap pattern includes a first overlap pattern disposed on the isolation insulating layer and formed of substantially the same material as the second active layer. A second overlap pattern is disposed on the first overlap pattern.

Abstract: Disclosed herein is an organic light emitting display apparatus. The organic light emitting display apparatus includes at least one thin film transistor and light emitting device on substrate, the light emitting device is apart from the substrate hole, and at least one isolation structure is disposed between the substrate hole and the light emitting device. Each thin film transistor includes source/drain electrodes, each light emitting device includes a first electrode, a light emitting layer, and a second electrode, the organic light emitting display apparatus includes a connection electrode connecting one of the source/drain electrodes of the thin film transistor to the first electrode of the light emitting device, and a planarization layer is disposed between the thin film transistor and the light emitting device. The isolation structure includes at least one undercut structure, and a height of each undercut structure is greater than a thickness of the light emitting layer.

Abstract: Disclosed is a display device having improved reliability. The display device includes a first transistor disposed on a substrate, an electrical property of the first transistor being shifted from a first initial value in a decreasing direction; a second transistor disposed on the substrate, an electrical property of the second transistor being shifted from a second initial value in an increasing direction; and a first upper barrier conductive layer disposed so as to overlap a first active layer of the first transistor and not to overlap a second active layer of the second transistor, whereby reliability of each of the first and second transistors is improved.

Abstract: A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.

Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconduc