Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: There is provided an image capture device including a narrow-band optical irradiation system including a light source, a solid-state imaging element including an array of pixels and sensitive to a predetermined range of wavelengths, and a metal thin-film filter provided in an optical path between the optical irradiation system and the solid-state imaging element, and having a periodic microstructural pattern having a period shorter than a wavelength detected by the solid-state imaging element.

Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: The present technology relates to an optical filter, a solid state imaging device, and an electronic apparatus that make it possible to suppress the occurrence of color mixing due to wavelength components on the short wavelength side relative to the desired transmission component. The optical filter includes: a metal thin-film filter in which a plurality of openings are periodically arranged; a first dielectric layer coating a surface of the metal thin-film filter and formed so as to coat or fill an interior of the opening of the metal thin-film filter; and a second dielectric layer having a refractive index lower than a refractive index of the first dielectric layer and formed at least on an incidence surface side of the metal thin-film filter.

Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.

Abstract: A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths.

Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: There is provided an image capture device including a narrow-band optical irradiation system including a light source, a solid-state imaging element including an array of pixels and sensitive to a predetermined range of wavelengths, and a metal thin-film filter provided in an optical path between the optical irradiation system and the solid-state imaging element, and having a periodic microstructural pattern having a period shorter than a wavelength detected by the solid-state imaging element.

Abstract: A two-dimensional solid-state image pickup device includes a plurality of pixel regions arranged in a two-dimensional matrix in X and Y directions. Each of the pixel regions includes at least a light-receiving element, and a light-condensing element. The light-condensing element is a sub-wavelength lens including protrusions each having a size equivalent to or smaller than a wavelength of an electromagnetic wave incident on the light-receiving element. Each of the protrusions has a rounded edge.

Abstract: An imaging device includes: an imaging area in which a plurality of pixels used to acquire an image are provided; a spectrum area in which a plurality of pixels used to acquire a color spectrum are provided; and a filter that is formed above the pixels provided in the spectrum area and allows an electromagnetic wave with a desired wavelength to pass, wherein the filter is formed of a plasmon resonator that is a conductive metal structure having an unevenness structure at a predetermined pitch, and the imaging area and the spectrum area are provided on a single chip.

Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths.

Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.

Abstract: The present technology relates to solid-state image sensor and an imaging system which are capable of providing a solid-state image sensor and an imaging system which are capable of realizing a spectroscopic/imaging device for visible/near-infrared light having a high sensitivity and high wavelength resolution, and of achieving two-dimensional spectrum mapping with high spatial resolution.

Abstract: A solid-state imaging device includes: a light-receiving element making a photoelectric conversion and being disposed in each of a plurality of pixels, wherein a honeycomb structure in which a predetermined pixel is surrounded with six pixels neighboring the predetermined pixel out of the plurality of pixels or a structure in which one to three pixels out of the six neighboring pixels are omitted from the honeycomb structure is used as a basic unit.

Abstract: A camera system with a two-dimensional solid-state imaging device having pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element.

Abstract: An optical element includes a first filter having the function to transmit a component at a lower frequency than a first cutoff frequency in incident light, a second filter having the function to transmit a component at a higher frequency than a second cutoff frequency in the incident light, and a light-receiving element for photoelectrically converting the components transmitted through the first filter and the second filter in the incident light. A metal optical filter composed of a conductor thin film is used as at least one of the first filter and the second filter.

Abstract: A camera system with a two-dimensional solid-state imaging device having pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element.

Abstract: A two-dimensional solid-state imaging device includes: pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element.