Abstract: Method, apparatus and computer program product for hierarchical power analysis using improved activity abstraction and capacitance abstraction by accounting for design heterogeneity extremities comprising extracting design heterogeneity extremities from an RTL design; accounting for the design heterogeneity extremities during macro clock and data signals activity abstraction to generate improved macro activity abstractions; accounting for the design heterogeneity extremities during macro clock and data switching capacitance abstraction to generate improved macro capacitance abstractions; and using improved macro activity abstractions and improved macro capacitance abstractions during hierarchical chip power analysis.

Abstract: Method, apparatus and computer program product for hierarchical power analysis using improved activity abstraction and capacitance abstraction by accounting for design heterogeneity extremities comprising extracting design heterogeneity extremities from an RTL design; accounting for the design heterogeneity extremities during macro clock and data signals activity abstraction to generate improved macro activity abstractions; accounting for the design heterogeneity extremities during macro clock and data switching capacitance abstraction to generate improved macro capacitance abstractions; and using improved macro activity abstractions and improved macro capacitance abstractions during hierarchical chip power analysis.

Abstract: A system for post-silicon leakage characterization is configured to apply a rail voltage to a hardware component; cause the hardware component to operate at a particular frequency; cause a cooling device, coupled to the hardware component, to operate at a cooling capacity; run a workload on the hardware component after applying the rail voltage, causing the hardware component to operate at a particular frequency, and causing the cooling device to operate at a particular cooling capacity; discontinue the workload and clocks of the hardware component after a temperature of the hardware component has reached a steady high point; continuously measure temperature and leakage power of the hardware component after discontinuing the workload until the temperature of the hardware component has reached a steady low point; and adjust a power management procedure for the hardware component based on measured temperature and measured leakage power of the hardware component.

Abstract: Aspects of the present invention include a method, system and computer program product that provides for improved localized self-heating analysis during IC design. The method includes a processor for modeling a power characteristic and a thermal resistance characteristic for each one of a plurality of locations within a cell that is being designed into an integrated circuit; for performing a self-heating analysis to determine an amount of heat at each one of the plurality of locations within the cell; and for creating a thermal profile for the cell, wherein the thermal profile includes a maximum self-heating value for each of the plurality of locations within the cell and includes an average self-heating value for the cell, and wherein the maximum self-heating value and the average self-heating value are derived from the determined amount of heat at each one of the plurality of locations within the cell.

Abstract: Aspects of the present invention include a method, system and computer program product that provides for improved localized self-heating analysis during IC design. The method includes a processor for modeling a power characteristic and a thermal resistance characteristic for each one of a plurality of locations within a cell that is being designed into an integrated circuit; for performing a self-heating analysis to determine an amount of heat at each one of the plurality of locations within the cell; and for creating a thermal profile for the cell, wherein the thermal profile includes a maximum self-heating value for each of the plurality of locations within the cell and includes an average self-heating value for the cell, and wherein the maximum self-heating value and the average self-heating value are derived from the determined amount of heat at each one of the plurality of locations within the cell.

Abstract: A system for post-silicon leakage characterization is configured to apply a rail voltage to a hardware component; cause the hardware component to operate at a particular frequency; cause a cooling device, coupled to the hardware component, to operate at a cooling capacity; run a workload on the hardware component after applying the rail voltage, causing the hardware component to operate at a particular frequency, and causing the cooling device to operate at a particular cooling capacity; discontinue the workload and clocks of the hardware component after a temperature of the hardware component has reached a steady high point; continuously measure temperature and leakage power of the hardware component after discontinuing the workload until the temperature of the hardware component has reached a steady low point; and adjust a power management procedure for the hardware component based on measured temperature and measured leakage power of the hardware component.

Abstract: Aspects of the present invention include a method, system and computer program product that provides for improved localized self-heating analysis during IC design. The method includes a processor for modeling a power characteristic and a thermal resistance characteristic for each one of a plurality of locations within a cell that is being designed into an integrated circuit; for performing a self-heating analysis to determine an amount of heat at each one of the plurality of locations within the cell; and for creating a thermal profile for the cell, wherein the thermal profile includes a maximum self-heating value for each of the plurality of locations within the cell and includes an average self-heating value for the cell, and wherein the maximum self-heating value and the average self-heating value are derived from the determined amount of heat at each one of the plurality of locations within the cell.

Abstract: Aspects of the present invention include a method, system and computer program product that provides for improved localized self-heating analysis during IC design. The method includes a processor for modeling a power characteristic and a thermal resistance characteristic for each one of a plurality of locations within a cell that is being designed into an integrated circuit; for performing a self-heating analysis to determine an amount of heat at each one of the plurality of locations within the cell; and for creating a thermal profile for the cell, wherein the thermal profile includes a maximum self-heating value for each of the plurality of locations within the cell and includes an average self-heating value for the cell, and wherein the maximum self-heating value and the average self-heating value are derived from the determined amount of heat at each one of the plurality of locations within the cell.

Abstract: A system for post-silicon leakage characterization is configured to apply a rail voltage to a hardware component; cause the hardware component to operate at a particular frequency; cause a cooling device, coupled to the hardware component, to operate at a cooling capacity; run a workload on the hardware component after applying the rail voltage, causing the hardware component to operate at a particular frequency, and causing the cooling device to operate at a particular cooling capacity; discontinue the workload and clocks of the hardware component after a temperature of the hardware component has reached a steady high point; continuously measure temperature and leakage power of the hardware component after discontinuing the workload until the temperature of the hardware component has reached a steady low point; and adjust a power management procedure for the hardware component based on measured temperature and measured leakage power of the hardware component.

Abstract: A system for post-silicon leakage characterization is configured to apply a rail voltage to a hardware component; cause the hardware component to operate at a particular frequency; cause a cooling device, coupled to the hardware component, to operate at a cooling capacity; run a workload on the hardware component after applying the rail voltage, causing the hardware component to operate at a particular frequency, and causing the cooling device to operate at a particular cooling capacity; discontinue the workload and clocks of the hardware component after a temperature of the hardware component has reached a steady high point; continuously measure temperature and leakage power of the hardware component after discontinuing the workload until the temperature of the hardware component has reached a steady low point; and adjust a power management procedure for the hardware component based on measured temperature and measured leakage power of the hardware component.