Abstract: Embodiments herein relate to optimizing the duration of a sense amp enable signal in a memory device such as SRAM. A control circuit asserts the sense amp enable signal in response to a clock signal from a replica column of the SRAM. A feedback path extends from the sense amps back to the control circuit. In one approach, a change in a feedback signal on the feedback path indicates the sense amps have all received the sense amp enable signal. In another approach, a change in a feedback signal on the feedback path indicates the sense amps have all completed their sensing operations. In some cases, a selection can be made among multiple feedback paths.