Patents by Inventor Sravanthi Srikantam

Sravanthi Srikantam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12248016
    Abstract: A health signature of each switching device in a control system is estimated using system parameters such as a DC-link voltage, three-phase voltages, three-phase currents, and temperature. The switching devices can be implemented as transistors, and a health signature for each transistor may be an on-state resistance or an on-state voltage of the transistors. For example, the on-state resistance for a metal-oxide-semiconductor field-effect transistor (MOSFET) functions as a health signature. Alternatively, the on-state voltage is used as a health signature for an insulated-gate bipolar transistor (IGBT). Additionally, a junction temperature is estimated for each transistor. Using the estimated health signatures and the junction temperatures, the remaining useful life of each transistor is estimated.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: March 11, 2025
    Assignee: EATON INTELLIGENT POWER LIMITED
    Inventors: Deepak Balaji Somayajula, Swati Narula, Sravanthi Srikantam, Satish Mohanty, Chaitanya Pradeep Bhalwankar, Stuart John Moody, Daniel Peck, Ranjith Kumar Sreenilayam Raveendran
  • Publication number: 20230194593
    Abstract: A health signature of each switching device in a control system is estimated using system parameters such as a DC-link voltage, three-phase voltages, three-phase currents, and temperature. The switching devices can be implemented as transistors, and a health signature for each transistor may be an on-state resistance or an on-state voltage of the transistors. For example, the on-state resistance for a metal-oxide-semiconductor field-effect transistor (MOSFET) functions as a health signature. Alternatively, the on-state voltage is used as a health signature for an insulated-gate bipolar transistor (IGBT). Additionally, a junction temperature is estimated for each transistor. Using the estimated health signatures and the junction temperatures, the remaining useful life of each transistor is estimated.
    Type: Application
    Filed: December 12, 2022
    Publication date: June 22, 2023
    Inventors: Deepak Balaji Somayajula, Swati Narula, Sravanthi Srikantam, Satish Mohanty, Chaitanya Pradeep Bhalwankar, Stuart John Moody, Daniel Peck, Ranjith Kumar Sreenilayam Raveendran