Abstract: A memory module includes a plurality of memory devices and a stacked error correction code memory device. The plurality of memory devices includes one or more memory chips arranged in a plurality of ranks. The stacked error correction code memory device includes a plurality of error correction code memory chips. The number of error correction code memory chips is at least one more than the number of the one or more memory chips. Each of the error correction code memory chips are arranged together with the memory chips of one of the ranks.

Abstract: A memory module having a board and a plurality of memory elements on the board which belong to different memory ranks, each memory rank being addressable via a respective selection signal. The memory module additionally includes a memory buffer having a memory rank interface coupled to the memory elements of each memory rank, and a selection signal output for the selection signal of each memory rank, the memory elements being arranged in rows on the board and the memory elements of a memory rank extending only over half of the rows.

Abstract: A semiconductor memory arrangement includes a substrate, a first control device disposed on the substrate and adapted to receive command and address signals, a second control device, and a plurality of memory units. The second control device is adapted to receive the command and address signals from the first control device and to transmit the command and address signals to the memory units of the plurality of memory units.

Abstract: A semiconductor memory module comprises a control chip for driving ECC memory chips and further memory chips. The memory chips are arranged in two rows on a top side and a bottom side of the module circuit board. The ECC memory chips are arranged centrally on the module circuit board alongside the rows of the memory chips. A control bus connects the ECC memory chips and also the memory chips to the control chip. In a region remote from the control chip, the control bus branches in a contact-making hole into a first partial bus, to which a first group of memory chips are connected, and a second partial bus, to which a second group of memory chips are connected. The ECC memory chips are likewise connected to the control bus via the contact-making hole. Since the ECC memory chips are not arranged directly under the control chip, a bus branch directed backward is not required. As a result, space considerations on the module circuit board are eased and signal integrity on the control buses is improved.

Abstract: A buffer component for a memory module having a plurality of memory components includes item of access information in accordance with a data transmission protocol, the address, clock, control and command signals depending on the access information, a second data interface for driving a clock signal and address and command signals to the plurality of memory components and for driving a control signal to a group of the plurality of memory components in accordance with a signaling protocol, wherein an activation of the memory components and an acceptance of the address and command signals are effected in a manner dependent on the control signals, and a control unit which applies the address and command signals to the plurality of memory components during a first clock period of the clock signal and applies the control signal for activating the group of the plurality of memory components to the group of the plurality of memory components to be activated when address and command signals are present, in a succeedin

Abstract: An integrated buffer device. One embodiment provides a receiving unit and a logic unit to control the operation of the buffer device based on a setting signal.

Abstract: A memory module, a method for manufacturing a memory module and a computer system is disclosed. One embodiment includes a printed circuit board including a component area and a connector area, wherein a number of signal layers is larger in the component area than in the connector area, the connector area being configured to be plugged into a slot. The memory module further includes memory components mounted on the printed circuit board in the component area.

Abstract: A semiconductor memory arrangement includes a control device with a first port and a second port, the first and second port being adapted to receive command and address signals, a first buffer device being coupled to the first port, a second buffer device being coupled to the second port and a plurality of memory units at least including a first group of memory units and a second group of memory units.

Abstract: A system comprises a board, memory units that are arranged on the board, a control unit configured to control memory access to the memory units, at least one control/address bus configured to transmit control/address signals from the control unit to a first group of the memory units, and at least one clock bus configured to transmit a clock signal from the control unit to a second group of the semiconductor memory units. A length of the at least one control/address bus corresponds to the length of the at least one clock bus. The second group of memory units comprises fewer memory units than the first group of memory units.

Abstract: A semiconductor memory arrangement includes a substrate, a first control device disposed on the substrate and adapted to receive command and address signals, a second control device, and a plurality of memory units. The second control device is adapted to receive the command and address signals from the first control device and to transmit the command and address signals to the memory units of the plurality of memory units.

Abstract: An integrated circuit comprises a first data interface configured to be coupled to a first memory device, a second data interface configured to be coupled to a second memory device, a first control interface configured to be coupled to the first memory device, and a second control interface configured to be coupled to the second memory device. The control interfaces are arranged between the first data interface and the second data interface or the data interfaces are arranged between the first control interface and the second control interface.

Abstract: A memory module includes a module circuit board, an amplifier circuit disposed on the module circuit board for amplifying an input signal, and a memory component to store a data item, wherein the memory component is disposed on the module circuit board. The amplifier circuit includes an input to receive a data signal and an output to provide an amplified data signal. The memory component comprises an input to receive the amplified data signal, wherein the data item is stored in the memory component in dependence on a level of the received amplified data signal.

Abstract: A memory module having a board and a plurality of memory elements on the board which belong to different memory ranks, each memory rank being addressable via a respective selection signal. The memory module additionally includes a memory buffer having a memory rank interface coupled to the memory elements of each memory rank, and a selection signal output for the selection signal of each memory rank, the memory elements being arranged in rows on the board and the memory elements of a memory rank extending only over half of the rows.

Abstract: A memory module includes a plurality of memory devices and a stacked error correction code memory device. The plurality of memory devices includes one or more memory chips arranged in a plurality of ranks. The stacked error correction code memory device includes a plurality of error correction code memory chips. The number of error correction code memory chips is at least one more than the number of the one or more memory chips. Each of the error correction code memory chips are arranged together with the memory chips of one of the ranks.

Abstract: A circuit board includes a first group of layers located close to a top side of the circuit board, and a second group of layers located close to an underside of the circuit board. Signals which are fed to input and output contact terminals on the top side of the circuit board are passed along at least one of the layers of the group. Signals which are fed to input and output contact terminals on the underside of the circuit board are passed along at least one of the layers of the second group. The contact-making holes for connecting the input and output contact terminals to the layers of the first and second groups are preferably formed as blind contact-making holes.

Abstract: A printed circuit board for a memory module is disclosed. The printed circuit board provides inner layers, at least one middle layer with at least one large-area conductor structure for guiding a respective substantially constant electric potential. On a first and/or second inner layer directly above or below the middle layer, first or second high speed conductor structures are arranged to guide first or second high speed signals over the largest share of their guidance on the printed circuit board. Arranged on a top and/or bottom layer are: contacting conductor structures for at least one device, printed circuit board input and printed circuit board output contact terminals and short conductor structures which are each connected with predetermined ones of the printed circuit board input and/or printed circuit board output contact terminals or predetermined ones of the first and/or second high speed conductor structures through vias between the layers.

Abstract: A memory system, in particular a buffered memory system, e.g. a fully buffered memory system, a method for operating a memory system, and a device for use with a memory system is disclosed. In one embodiment, the memory system includes at least one buffered memory module, and a device for generating a first and second chip select signal from one single chip select signal. Further, a device for use with a memory system is provided, generating a second number of chip select signals from a first number of chip select signals, the first number of chip select signals being smaller, than the second number of chip select signals.

Abstract: A system comprises a board, memory units that are arranged on the board, a control unit configured to control memory access to the memory units, at least one control/address bus configured to transmit control/address signals from the control unit to a first group of the memory units, and at least one clock bus configured to transmit a clock signal from the control unit to a second group of the semiconductor memory units. A length of the at least one control/address bus corresponds to the length of the at least one clock bus. The second group of memory units comprises fewer memory units than the first group of memory units.

Abstract: A semiconductor memory module, which is formed as an FBDIMM memory module, for example, has a planar design. In the 2R×4 configuration, semiconductor components are arranged in two rows on a top side of a module board and semiconductor memory components are likewise arranged in two rows on an underside of the module board. In contrast to a “Stacked DRAM” design, the semiconductor components in accordance with the planar design contain only one memory chip. By using a parallel routing for a command address bus and an on-die termination bus, the address, clock, and control buses can be adapted in terms of load, so that different signal propagation times on the different buses are avoided to the greatest possible extent.

Abstract: A circuit arrangement includes an arrangement of layers, wherein the arrangement of layers has a first surface and a second surface, at least one first and at least one second plated-through hole, at least one third plated-through hole, at least one first semiconductor component, and at least one second semiconductor component. A first layer from among the plurality of layers has a first conductive region and a second conductive region, which are coupled via a conductive connection. A second layer from among the plurality of layers has at least one first conductive region coupled to the first plated-through hole, and a second conductive region coupled to the second plated-through hole.