Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: A multi-step polishing system, and a process for polishing a workpiece using the system. The system includes one or more polishing stations. The workpiece is polished in the presence of an oxidizer-free medium, and subsequently, the workpiece is polished in the presence of an oxidizing medium. This polishing sequence extends the life of the polishing pads and provides for a more uniform polish.

Abstract: An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.

Abstract: An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.