Patents by Inventor Sriharsha JAYANTI

Sriharsha JAYANTI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10546756
    Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 28, 2020
    Assignee: Lam Research Corporation
    Inventors: Sriharsha Jayanti, Sangjun Cho, Steven Chuang, Hsu-Cheng Huang, Jian Wu
  • Publication number: 20180151386
    Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 31, 2018
    Inventors: Sriharsha JAYANTI, Sangjun CHO, Steven CHUANG, Hsu-Cheng HUANG, Jian WU