Abstract: The present technology provides solutions for determining transaction insights regarding a subject entity and on behalf of an inquiring entity. An exemplary method includes receiving an Application Programming Interface (API) communication calling an API, determining that the inquiring entity is permitted to access the transaction insights for the use case associated with the API, collecting data for the parameters in the defined in the API communication to yield collected data, analyzing the collected data to derive the transaction insights including at least one risk insight score and at least one reason code associated with the risk insight score, and providing a data pack of the transaction insights in a responsive communication to the inquiring entity.

Abstract: The present invention provides a process for producing liquid hydrocarbon products from solid biomass and/or residual waste feedstocks.

Abstract: In a method for communicating information about a service or product, a record can be retrieved from a database storing records of communications related to a second entity. The record can include information related to an identity of a first entity. The first entity can be defined, at a processor and based upon content of the record, as a member of a set designated to be sent the information about the product or service. The first entity can have previously engaged in a first communication related to the second entity. The second entity can be associated with the product or service. A second communication, which can include the information related to the identity of the first identity, can be sent from the processor to an advertising platform. A third communication, which can include the information about the product or service, can be sent from the processor to the advertising platform.

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.