Abstract: In an aspect, an integrated circuit (IC) package includes a base structure, an IC component disposed on the base structure, a plurality of interposer connection structures disposed on the base structure, and an interposer structure disposed over the IC component and the plurality of interposer connection structures. The plurality of interposer connection structures is configured to connect the base structure and the interposer structure. Each interposer connection structure of the plurality of interposer connection structures includes a bond ball portion that is connected to the base structure, and a bond wire portion that is coupled to the bond ball portion and extends toward the interposer structure. A width of the bond ball portion is greater than a width of the bond wire portion.

Abstract: In an aspect, an integrated circuit (IC) package includes a base structure, an IC component disposed on the base structure, a plurality of interposer connection structures disposed on the base structure, and an interposer structure disposed over the IC component and the plurality of interposer connection structures. The plurality of interposer connection structures is configured to connect the base structure and the interposer structure. Each interposer connection structure of the plurality of interposer connection structures includes a bond ball portion that is connected to the interposer structure, and a bond wire portion that is coupled to the bond ball portion and extends toward the base structure. A width of the bond ball portion is greater than a width of the bond wire portion.

Abstract: A storage device includes multiple memory dies and a controller configured to: (i) perform XOR parity computations for parity bins based, at least in part, on updated contents of a first user data memory cell and contents of each user data memory cell also assigned to the first parity bin, (ii) storing the first parity data into a first parity memory cell associated with the first parity bin; (iii) identify a second parity memory cell for dynamic reconfiguration based, at least in part, on performance data of the non-volatile memory device, the second parity memory cell being assigned to a second parity bin; (iv) copy the second parity memory cell to a third memory cell of the plurality of memory cells; and (v) associate the third memory cell with the second parity bin, thereby making the third memory cell a parity memory cell of the plurality of parity memory cells.

Abstract: A package comprising a substrate comprising a first surface and a second surface; a first integrated device coupled to the first surface of the substrate; an interconnection die coupled to the first surface of the substrate; a first encapsulation layer coupled to the first surface of the substrate, wherein the first encapsulation layer encapsulates the first integrated device and the interconnection die; and a second integrated device coupled to the second surface of the substrate.

Abstract: A storage device includes multiple memory dies and a controller configured to: (i) perform XOR parity computations for parity bins based, at least in part, on updated contents of a first user data memory cell and contents of each user data memory cell also assigned to the first parity bin, (ii) storing the first parity data into a first parity memory cell associated with the first parity bin; (iii) identify a second parity memory cell for dynamic reconfiguration based, at least in part, on performance data of the non-volatile memory device, the second parity memory cell being assigned to a second parity bin; (iv) copy the second parity memory cell to a third memory cell of the plurality of memory cells; and (v) associate the third memory cell with the second parity bin, thereby making the third memory cell a parity memory cell of the plurality of parity memory cells.

Abstract: An integrated circuit (IC) package that is to be incorporated into a computing device may include a metallization structure with circuits and/or other elements such as capacitors or inductors thereon. Pads for input/output (I/O) (or other) purposes may also be present at different locations on the metallization structure. Exemplary aspects of the present disclosure allow mold material to be placed over the circuits and/or other elements in readily-customizable configurations so as to allow placement of the I/O pads in any desired location on the metallization structure. Specifically, before the mold material is applied to the metallization structure, a mask material such as tape may be applied to portions of the metallization structure that contain I/O pads or otherwise have reasons to not have mold material thereon. The mold material is applied, and the mask material is removed, taking unwanted mold material with the mask material.

Abstract: Certain aspects of the present disclosure provide apparatus and techniques for partially molding packages for integrated circuits. A packaged assembly for integrated circuits includes: a substrate having at least one mold barrier between a first region on a first surface of the substrate and a second region on the first surface; a die attached to the substrate; one or more components attached to the substrate in the first region; and a first encapsulant over the one or more components in the first region, wherein the at least one mold barrier is configured to block a portion of the first encapsulant from moving from the first region of the substrate to the second region of the substrate during an application of the first encapsulant.

Abstract: An integrated circuit (IC) package that is to be incorporated into a computing device may include a metallization structure with circuits and/or other elements such as capacitors or inductors thereon. Pads for input/output (I/O) (or other) purposes may also be present at different locations on the metallization structure. Exemplary aspects of the present disclosure allow mold material to be placed over the circuits and/or other elements in readily-customizable configurations so as to allow placement of the I/O pads in any desired location on the metallization structure. Specifically, before the mold material is applied to the metallization structure, a mask material such as tape may be applied to portions of the metallization structure that contain I/O pads or otherwise have reasons to not have mold material thereon. The mold material is applied, and the mask material is removed, taking unwanted mold material with the mask material.

Abstract: A package comprising a substrate comprising a first surface and a second surface, a passive device coupled to the first surface of the substrate, a first encapsulation layer located over the first surface of the substrate, wherein the first encapsulation layer encapsulates the passive device, an integrated device coupled to the second surface of the substrate, a second encapsulation layer located over the second surface of the substrate, wherein the second encapsulation layer encapsulates the integrated device, a plurality of through encapsulation layer interconnects coupled to the substrate, a plurality of encapsulation layer interconnects coupled to the plurality of through encapsulation layer interconnects, and at least one dummy interconnect located in the second encapsulation layer, wherein the at least one dummy interconnect is located vertically over a back side of the integrated device.

Abstract: Certain aspects of the present disclosure provide apparatus and techniques for partially molding packages for integrated circuits. A packaged assembly for integrated circuits includes: a substrate having at least one mold barrier between a first region on a first surface of the substrate and a second region on the first surface; a die attached to the substrate; one or more components attached to the substrate in the first region; and a first encapsulant over the one or more components in the first region, wherein the at least one mold barrier is configured to block a portion of the first encapsulant from moving from the first region of the substrate to the second region of the substrate during an application of the first encapsulant.

Abstract: Semiconductor devices are described that employ techniques configured to control adhesive application between a substrate and a die. In an implementation, a sacrificial layer is provided on a top surface of the die to protect the surface, and bonds pads thereon, from spill-over of the adhesive. The sacrificial layer and spill-over adhesive are subsequently removed from the die and/or chip carrier. In an implementation, the die includes a die attach film (DAF) on a bottom surface of the die for adhering the die to the cavity of the substrate. The die is applied to the cavity with heat and pressure to cause a portion of the die attach film (DAF) to flow from the bottom surface of the die to a sloped surface of the substrate cavity.

Abstract: In accordance with some embodiments of the present invention, a gas sensor system is disclosed. In accordance with some embodiments, a system includes a glass substrate; a heater formed on the glass substrate; and a sensor formed adjacent the heater formed on the glass substrate. A method of forming a gas sensor system according to some embodiments includes providing a glass substrate; forming a heater on the glass substrate; and forming a sensor adjacent the heater on the glass substrate.

Abstract: A method for manufacturing a plurality of die pairs includes providing a first wafer including a plurality of spaced apart first dies arranged in a first array including a first, first die row and a second, first die row spaced apart by a first portion of a first row channel; providing a second wafer including a plurality of spaced apart second dies arranged in a second array including a first, second die row and a second, second die row spaced apart by a second portion of the first row channel; connecting the first wafer to the second wafer with a connector assembly to form a wafer pair such that the first dies and the second dies cooperate to form the plurality of die pairs; positioning a first support assembly between the first wafer and the second wafer to rigidly support the first wafer relative to the second wafer; and cutting along the first row channel with a blade to separate the plurality of die pairs from one another.

Abstract: A method of forming a plurality of sealed packages comprises providing a base including a base surface; providing a lid including a lid surface; positioning a plurality of spaced apart seal members along the base surface, the seal members being formed from a seal material including a fusible metal alloy; positioning the lid on the base with a plurality of spaced apart spacers positioned and extending between the base surface and the lid surface, the spacers maintaining the lid surface spaced apart from the seal members by a fluid gap, the spacers being made from a spacer material including a fusible metal alloy; creating a controlled environment around the base and the lid; and heating to melt the spacers and the seal material so that the seal members form a plurality of seal rings between the base surface and the lid surface.

Abstract: Semiconductor devices are described that employ techniques configured to control adhesive application between a substrate and a die. In an implementation, a sacrificial layer is provided on a top surface of the die to protect the surface, and bonds pads thereon, from spill-over of the adhesive. The sacrificial layer and spill-over adhesive are subsequently removed from the die and/or chip carrier. In an implementation, the die includes a die attach film (DAF) on a bottom surface of the die for adhering the die to the cavity of the substrate. The die is applied to the cavity with heat and pressure to cause a portion of the die attach film (DAF) to flow from the bottom surface of the die to a sloped surface of the substrate cavity.

Abstract: A process is described for production of a chlorinated sucrose from a process stream containing a 6-O-protected chlorinated sucrose derived from chlorination of 6-O-protected sucrose wherein the process stream is treated under conditions which prevent or reverse deacylation of 6-O-protected chlorinated sucrose, extracting the same in a solvent, washing most of the dimethylformamide free from the solvent extract by repeated washing with saturated sodium chloride solution, isolating the 6-O-protected sucrose as a pure fraction and obtaining a chlorinated sucrose by deacylating the same.