Abstract: An end effector for a substrate supporting and transferring system includes a wrist, a plurality of electrically insulative substrate support members extending from the wrist and having a proximal portion supported therein, the substrate supporting member including a substrate facing surface, a conductive coating, and at least a first conductive member disposed upon and in electrical contact with the conductive coating, the conductive coating extending from the conductive member to the proximal end of the support member; and a connection member extending between the conductive coating and the wrist. In one aspect, the conductive member includes a conformable or compliant conductive element, coupled to a conductive plate.

Abstract: A load lock system including an imaging subsystem and an image processing subsystem to capture comprehensive data of a substrate within a load lock chamber. The imaging subsystem can include multiple imaging elements (e.g. cameras or image sensors), to capture image data of a substrate. The image processing subsystem can process the image data with a number of computer vision, or feature extraction techniques to identify nonconformities associated with the substrate. These nonconformities can include chips, breaks, scratch, placement errors, orientation errors, or a number of other errors associated with the substrate and substrate components. The image processing subsystem can further output a message indicating any one of these errors have occurred.

Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.