Abstract: A device and method of object detection in a scene by combining traditional 2D visual light imaging such as pixels with 3D data such as a voxel map are described. A single lens directs image light from the scene to a dichroic mirror which then provides light to a both a 2D visible light image sensor and a 3D sensor, such as a time-of-flight sensor that uses a transmitted, modulated IR light beam, which is then synchronously demodulated to determine time of flight as well as 2D coordinates. 2D portions (non-distance) of 3D voxel image data are aligned with the 2D pixel image data such that each is responsive to the same portion of the scene. Embodiments determine true reflectivity, true scale, and image occlusion. 2D images may be enhanced by the 3D true reflectivity. Combined data may be used as training data for object detection and recognition.

Abstract: An optical device creates 3D images comprising a field of points, each point comprising horizontal, vertical, and distance metrics. The device comprises an illumination subsystem, comprising light sources, such as LEDs, a non-resonant beam steering element such as a micro-electro-mechanical system (MEMs) mirror, beam-shaping optics, a beam director plate, and a diffuser. The device also comprises an imaging subsystem with one or more optical detector chips that measure time-of-flight (TOF). Devices may dynamically and sequentially images solid-angle sub-regions of interest, in an arbitrary order, out of a total FOV, using eye-safe illumination. The corresponding received image portions are stitched together. The beam steering element is non-resonant, allowing arbitrary and rapid changes to its pointing vector. Beam shaping optics generates rectangular solid-angle illumination. One detector chip integrates light from one sub-region while another chip is reads out image data.

Abstract: A device and method of object detection in a scene by combining traditional 2D visual light imaging such as pixels with 3D data such as a voxel map are described. A single lens directs image light from the scene to a dichroic mirror which then provides light to a both a 2D visible light image sensor and a 3D sensor, such as a time-of-flight sensor that uses a transmitted, modulated IR light beam, which is then synchronously demodulated to determine time of flight as well as 2D coordinates. 2D portions (non-distance) of 3D voxel image data are aligned with the 2D pixel image data such that each is responsive to the same portion of the scene. Embodiments determine true reflectivity, true scale, and image occlusion. 2D images may be enhanced by the 3D true reflectivity. Combined data may be used as training data for object detection and recognition.

Abstract: An optical device creates 3D images comprising a field of points, each point comprising horizontal, vertical, and distance metrics. The device comprises an illumination subsystem, comprising light sources, such as LEDs, a non-resonant beam steering element such as a micro-electro-mechanical system (MEMS) mirror, beam-shaping optics, a beam director plate, and a diffuser. The device also comprises an imaging subsystem with one or more optical detector chips that measure time-of-flight (TOF). Devices may dynamically and sequentially images solid-angle sub-regions of interest, in an arbitrary order, out of a total FOV, using eye-safe illumination. The corresponding received image portions are stitched together. The beam steering element is non-resonant, allowing arbitrary and rapid changes to its pointing vector. Beam shaping optics generates rectangular solid-angle illumination. One detector chip integrates light from one sub-region while another chip is reads out image data.

Abstract: An optical device creates a 3D image of a volume of interest comprising horizontal, vertical, and distance information for each voxel. Two pairs of two Risley prisms rotate synchronously to first create outgoing modulated illumination beams, and second to direct incoming light to an image sensor. Synchronization allows the imaging portion of the system to look at the same field of view as is illuminated. This field of view is smaller than the volume of interest. The field of view is scanned both horizontal and vertically to encompass the volume of interest, and may by directed to any arbitrary field of view. The illumination beam is amplitude modulated. The image sensor demodulates synchronously, computing time-of-flight for each pixel. Modulation frequency and sensor integration time are dynamically adjusted responsive to a desired volume of interest or field of view.

Abstract: An optical device creates a 3D image of a volume of interest comprising horizontal, vertical, and distance information for each voxel. An illumination beam director and an imaging beam director are synchronized to each point to a selected, arbitrary, dynamically selectable reduced field of view, within a total field of view. Each reduced field of view is illuminated at once by a modulated continuous wave light source; and is imaged at once, using a pixel-array image sensor comprising time-of-flight for each of at least 8,000 pixels. The device sequences through 4 to 600 reduced fields of view until the total field of view is imaged. The device is free of rotating mechanical components. The pixel-array image sensor demodulates synchronously with the light source. Modulation frequency and sensor integration time are dynamically adjusted responsive to a desired volume of interest or field of view.

Abstract: A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region, including a heavily doped InGaAs base layer and a very thin undoped InGaAs spacer layer, is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light.

Abstract: A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region, including a heavily doped InGaAs base layer and a very thin undoped InGaAs spacer layer, is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light.

Abstract: Mach-Zehnder modulator with index tuned multimode interference couplers comprising a substrate, an optical input waveguide on the substrate for receiving a light signal, and an input multimode interference coupler. The input multimode interference coupler splits the received light and propagates it down two separate waveguides. Also, the input multimode interference coupler contains electrodes that allow the index of refraction to be tuned. These waveguides contain phase shift regions so that the light signals can be combined at the output multimode interference coupler out of phase. This allows the modulation of the light signal. Also, the output multimode interference coupler contains electrodes that allow the index of refraction to be tuned. The modulated light signal is then outputted through an output waveguide. The tuning of the index of refraction for the input and output multimode interference couplers eliminates the sensitivity of the areas to variations in their geometry.

Abstract: Mach-Zehnder modulator with index tuned multimode interference couplers comprising a substrate, an optical input waveguide on the substrate for receiving a light signal, and an input multimode interference coupler. The input multimode interference coupler splits the received light and propagates it down two separate waveguides. Also, the input multimode interference coupler contains electrodes that allow the index of refraction to be tuned. These waveguides contain phase shift regions so that the light signals can be combined at the output multimode interference coupler out of phase. This allows the modulation of the light signal. Also, the output multimode interference coupler contains electrodes that allow the index of refraction to be tuned. The modulated light signal is then outputted through an output waveguide. The tuning of the index of refraction for the input and output multimode interference couplers eliminates the sensitivity of the areas to variations in their geometry.

Abstract: A monolithically integrated heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector. An edge illuminated epilayer waveguide phototransistor is used as the light-detecting element. The phototransistor is used as an optical detector in which the incident light pulses are converted to electrical pulses and then amplified for further signal processing. The phototransistor is monolithically integrated on the same material substrate as the emitter follower amplifier so that the parasitics normally associated with receiver circuitry are minimized. By eliminating the parasitic impedances, the circuit can be used as a receiver in high bit rate optical communication systems.

Abstract: An edge illuminated epilayer waveguide phototransistor including a subcollector layer formed from an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region of moderately doped InGaAs is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light. Also, the base does not have an ohmic contact so that the base thickness can be minimized. Finally, the base doping concentration is minimized so that the gain-bandwidth product can be maximized.

Abstract: A monolithically integrated heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector. An edge illuminated epilayer waveguide phototransistor is used as the light-detecting element. The phototransistor is used as an optical detector in which the incident light pulses are converted to electrical pulses and then amplified for further signal processing. The phototransistor is monolithically integrated on the same material substrate as the emitter follower amplifier so that the parasitics normally associated with receiver circuitry are minimized. By eliminating the parasitic impedances, the circuit can be used as a receiver in high bit rate optical communication systems.

Abstract: A waveguide (10) is provided having a two-dimensional optical wavelength Bragg grating (20) embedded within a semiconductor laser medium (16). More particularly, the waveguide (10) includes an active region (16) sandwiched between n-doped and p-doped cladding layers (14, 22). The two-dimensional Bragg grating (20) is formed in the active region (16). Upper and lower electrodes (24, 26) are defined on opposite sides of the cladding layers (14, 22) to complete the waveguide structure (10). The two-dimensional grating (20) provides simultaneous frequency selective feedback for mode control in both the longitudinal and lateral directions.