Abstract: A polishing tool and methodology are disclosed, particularly useful for chemical mechanical polish (CMP) applications (e.g., polishing and planarizing). In an embodiment, the tool includes a carrier structure configured to support a workpiece, a polishing pad configured to rotate and polish at least a portion of the workpiece, a source configured to generate excitation radiation directed towards the workpiece, and a detector configured to receive fluorescence radiation from the workpiece. The fluorescence radiation is generated by absorption of the excitation radiation by a polymer material on the workpiece. The polishing tool also includes a controller configured to, based on a magnitude of the received fluorescence radiation, change at least one operating condition of the polishing tool. For instance, the controller can speed or slow the polishing process, and stop the polishing process when a target thickness is achieved.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: An electrochemically-assisted megasonic cleaning method includes applying an electrical potential to a conductive surface immersed in solution to form bubbles of gaseous molecules produced by electrochemical reaction, and applying a megasonic field to the solution to oscillate the bubbles and clean the conductive surface without causing damage. An electrochemically-assisted megasonic cleaning system includes an electrical supply for applying electrical potential to a conductive surface immersed in solution to induce bubble formation in the solution and at the surface through an electrochemical reaction, and a transducer for applying a megasonic field to the solution to induce oscillation of the bubbles.

Abstract: A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (<180° C.) removal of the underlying resist.

Abstract: A back end of line cleaning process is performed using a liquid mixture containing at least two benign chemicals that can form a eutectic. In one embodiment, liquid mixtures of urea and choline chloride, at a molar ratio of 2:1, in the temperature range of 40° C. to 70° C. are used to remove etch residues on copper interconnects and dielectric layers created by g-line and DUV resists. In certain embodiments, eutectic, hypereutectic, and hypoeutectic compositions of the at least two benign chemicals are used.

Abstract: A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (<180° C.) removal of the underlying resist.

Abstract: A method for controlled nucleation and growth of microtubules on substrates. The substrate is functionalized with a nucleating agent for microtubule growth. The method can be employed to generate nanoscale structures on substrates or between substrates by additional attachment of MT capture agents which function to capture the ends of growing MT to form connecting MT structures. The method can be used to form 2-and 3-D structures on or between substrates and can function to establish interconnects between nanoscale devices or molecular electronic devices and electrodes. A specific method for metallization of biological macromolecules and structures is provided which can be applied to metallized the MT formed by the growth and capture method. The metallization method is biologically benign and is particularly useful for copper metallization of MTs.

Abstract: Microtubules are excellent candidates for the fabrication of nanostructures, including nanowires. A method for controlled nucleation and growth of microtubules on substrates (e.g., gold on a silicon wafer) is provided. The substrate is functionalized with a nucleating agent for microtubule growth. The method can be employed to generate nanoscale structures on substrates or between substrates by additional attachment of MT capture agents which function to capture the ends of growing MT to form connecting MT structures. The method can be used to form 2- and 3-D structures on or between substrates and can function to establish interconnects between nanoscale devices or molecular electronic devices and electrodes. A specific method for metallization of biological macromolecules and structures in provides which can be beneficially applied to metallized the MT formed by the growth and capture method. The metallization method is biologically benign and is particularly useful for copper metallization of MTs.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: A method is provided to remove in particular ion implanted photoresist from a substrate, such as a semiconductor wafer, consisting of heating the photoresist for deforming an interface of a crust and bulk layer of the photoresist, and controlling a temperature of the heating for cracking the photoresist.

Abstract: Microtubules are excellent candidates for the fabrication of nanostructures, including nanowires. A method for controlled nucleation and growth of microtubules on substrates (e.g., gold on a silicon wafer) is provided. The substrate is functionalized with a nucleating agent for microtubule growth. The method can be employed to generate nanoscale structures on substrates or between substrates by additional attachment of MT capture agents which function to capture the ends of growing MT to form connecting MT structures. The method can be used to form 2- and 3-D structures on or between substrates and can function to establish interconnects between nanoscale devices or molecular electronic devices and electrodes. A specific method for metallization of biological macromolecules and structures in provides which can be beneficially applied to metallized the MT formed by the growth and capture method. The metallization method is biologically benign and is particularly useful for copper metallization of MTs.

Abstract: A powder coating method includes applying an antistatic material to the surface of an electrically nonconducting substrate. The antistatic material is preferably a fatty amine salt and is applied by spraying. A flow of electrostatically charged powder particles is directed toward the substrate to form a powder coating on the substrate, and the powder coating is thereafter cured.

Abstract: A post chemical-mechanical polishing clean-up process. Particles and ionic and metallic contaminants remaining on wafer 32 surface after CMP are removed and scratches are smoothed. The wafer 32 may be subjected to a high pressure/high rotational speed rinse at spindle rinse station 42 followed by buffing of the wafer 32 on a second polishing platen 38. If desired, a second high pressure/high speed rinse at spindle rinse station 42 may be performed after the buffing step. The wafer 32 may then be then transferred to a tank 50 for a megasonic bath and after the megasonic bath, the wafer 32 is transferred to a scrubber 44, which scrubs both surfaces of the wafer 32 with brushes and then spins the wafer 32 dry as spin station 84. All transfers are performed in a solution such as DI water to prevent drying of slurry on the wafer surface.

Abstract: There is provided a filter medium comprising a microporous polyvinylidene fluoride membrane and a polymer containing a positively charged organic phosphonium compound grafted to the membrane in a concentration sufficient to provide a surface of said membrane with a positive charge such that there is minimal susceptibility to the extraction of said polymer. The polymer may also contain an acrylate or methacrylate. There is also provided a method for ultrapurifying a liquid and an ultrapurifying system for water.

Abstract: The present invention relates to a method for the preparation of ultrafine oxide particles using organized reaction media. Integrated circuit (IC) densities have necessitated the use of ultrahigh purity process fluids in state of the art fabrication facilities. It is the purpose of the present invention to synthesize monodispersed submicron particles of some representative contaminants, such as ultrafine oxide particles, using organized reaction media, and study their characteristics in relation to their removal from process fluids.