Abstract: A method for fabricating and transferring high quality and manufacturable light-emitting devices, such as small sized light-emitting diodes (mLEDs), using epitaxial lateral overgrowth (ELO) and isolation methods. III-nitride ELO layers are grown on a host substrate using a growth restrict mask, and III-nitride device layers are grown on wings of the III-nitride ELO layers. The resulting devices are isolated from the host substrate while attached by a connecting link comprising an epitaxial or non-epitaxial bridge. A regrowth is performed on selected mesas of the device layers to realize improved devices with the help of the bridge. The bridge is broken, and the devices are then plucked from the host substrate and placed on a display panel.

Abstract: A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (?LEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

Abstract: An epitaxial lateral overgrowth (ELO) of a III-nitride layer is used to cover a growth restrict mask deposited on a substrate, wherein the III-nitride ELO layer is grown with a low V/III ratio of less than 500 resulting in high-speed lateral growth as compared to low-speed vertical growth. The III-nitride ELO layer contains a large amount of impurities, over 1 × 1018 cm-3, which result in the III-nitride ELO layer comprising a coloring layer. The coloring layer absorbs light from an active region due to the large amount of impurities. When a bar of device layers is removed from the substrate, at least a portion of the coloring layer is removed from the bar. The elimination of the coloring layer reduces absorption losses, which makes the device characteristics improve.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A method for removing devices from a substrate using a supporting plate. One or more bars comprised of semiconductor layers are formed on a substrate, and one or more device structures are formed on the bars. At least one supporting plate is bonded to the bars, and stress is applied to the supporting plate to remove the bars from the substrate. The supporting plate is used to divide the bars into one or more device units after the bars are removed from the substrate, wherein the device units are packaged and arranged into one or more modules. The supporting plate may also be used to make a cleavage facet for one or more of the device structures after the bars are removed from the substrate.

Abstract: Epitaxial lateral overgrowth (ELO) III-nitride layers are grown on or above an opening area of a growth restrict mask deposited on a substrate, wherein the growth of the ELO III-nitride layers and/or a subsequent regrowth layer form one or more voids. III-nitride device layers are grown on or above the ELO III-nitride layers and/or regrowth layer. Stress is applied to a breaking point at the substrate, with the voids assisting the application of stress, so that a bar of devices comprised of the III-nitride device layers, the ELO III-nitride layers and the regrowth layer is removed from the substrate. The voids release stress from the growth restrict mask, which helps prevent cracks. Decomposition of the growth restrict mask is avoided to prevent compensation of p-type layers.

Abstract: An epitaxial lateral overgrowth (ELO) layer is grown on an opening area of a substrate, wherein the ELO layer is higher than a surface 5 of a trench in the substrate. The trench is apt to form a symmetric shape of the ELO layer, which renders it suitable for flip-chip bonding The shape of the ELO layer has a depressed surface region at a back side of a bar formed by the ELO layer. A cleaving point is located higher than the bottom of the ELO layer, so that a force can be efficiently applied to 10 the cleaving point for removing the bar.

Abstract: A method for flattening a surface on an epitaxial lateral overgrowth (ELO) layer, resulting in obtaining a smooth surface with island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers are formed by stopping the growth of the ELO layers before they coalesce to each other. Then, a growth restrict mask is removed before at least some III-nitride device layers are grown. Removing the mask decreases an excess gases supply to side facets of the island-like III-nitride semiconductor layers, which can help to obtain a smooth surface on the island-like III-nitride semiconductor layers. The method also avoids compensation of a p-type layer by decomposed n-type dopant from the mask, such as Silicon and Oxygen atoms.

Abstract: A method for obtaining a smooth surface of an epi-layer with epitaxial lateral overgrowth. The method does not use mis-cut orientations and does not suppress the occurrence of pyramidal hillocks, but instead embeds the pyramidal hillocks in the epi-layer. A growth restrict mask is used to limit the expansion of the pyramidal hillocks in a lateral direction. The surface of the epi-layer becomes extremely smooth due to the disappearance of the pyramidal hillocks.

Abstract: A method of removing semiconducting layers from a substrate, in particular, III-nitride-based semiconductor layers from a III-nitride-based substrate, with an attached film, using a peeling technique. The method comprises forming the semiconductor layers into island-like patterns on the substrate via an epitaxial lateral overgrowth method, with a horizontal trench extending inwards from the sides of the layers. Stress is induced in the layers by raising or lowering the temperature, and applying pressure to the attached film, such that the film firmly fits a shape of the layers. Differences in thermal expansion between the substrate and the film attached to the layers initiates a crack at an interface between the layers and the substrate, so that the layers can be removed from the substrate. Once the layers are removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method for dividing a bar of one or more devices. The bar is comprised of island-like III-nitride-based semiconductor layers grown on a substrate using a growth restrict mask; the island-like III-nitride-based semiconductor layers are removed from the substrate using an Epitaxial Lateral Overgrowth (ELO) method; and then the bar is divided into the one or more devices using a cleaving method.

Abstract: A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about ?47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth (57) restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A multiply-wound tube includes: a tube body formed by winding, into a roll, a metal plate comprising a core material layer made of a first metal material and a brazing material layer made of a second metal material having a lower melting point than the core material layer; and a joint portion that is formed at a portion of the metal plate that is wound in layers, wherein the portion of the metal plate that is wound in layers is brazed together by the brazing material layer being melted by heat from a laser projected onto the tube body.

Abstract: A multiply-wound tube includes: a tube body formed by winding, into a roll, a metal plate comprising a core material layer made of a first metal material and a brazing material layer made of a second metal material having a lower melting point than the core material layer; and a joint portion that is formed at a portion of the metal plate that is wound in layers, wherein the portion of the metal plate that is wound in layers is brazed together by the brazing material layer being melted by heat from a laser projected onto the tube body.