Abstract: MicroLED devices can be transferred in large numbers to form microLED displays using processes such as pick-and-place, thermal adhesion transfer, or fluidic transfer. A blanket solder layer can be applied to connect the bond pads of the microLED devices to the terminal pads of a support substrate. After heating, the solder layer can connect the bond pads with the terminal pads in vicinity of each other. The heated solder layer can correct misalignments of the microLED devices due to the transfer process.

Abstract: Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection.

Abstract: A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks. The glass or glass ceramic layer can have a set point and/or strain point below the deposition temperature of GaN, which can assist in releasing stress in the deposited GaN layer. Additionally, the composite substrate can be exposed to a heated and dry hydrogen ambient to reduce an oxide layer between the silicon layer and the glass or glass ceramic layer, to allow the formation of free standing GaN layer.

Abstract: An LED display can be fabricated by assembling micro LED chips on a backplane substrate. The micro LED chips can be assembled using a flip chip process, achieving self alignment caused by the solder reflow.

Abstract: Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection.

Abstract: Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.

Abstract: Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.

Abstract: Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection.

Abstract: Silicon substrate having (100) crystal orientation can be wet etched to form (111) sharp tip pyramids. The sharp tip pyramids can be used to fabricate electrodes for flat panel displays, such as a plasma display panel or a field emission display.