Abstract: Various embodiments may relate to a resonator. The resonator may include a support including a substrate portion, and a membrane portion extending from the substrate portion over a cavity. The resonator may also include a piezoelectric layer on the membrane portion. The resonator may further include an electrode on the piezoelectric layer. The substrate portion may include dopants of a first conductivity type. The membrane portion may include dopants of a second conductivity type different from the first conductivity type. A ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer may be above 3:1 for temperature compensation.

Abstract: Various embodiments may relate to a piezoelectric device. The piezoelectric device may include a substrate, and a layered stacked arrangement anchored to the substrate. The layered stacked arrangement may include a piezoelectric layer. The stacked arrangement may also include a first electrode on a first side of the piezoelectric layer. The stacked arrangement may further include a second electrode on a second side of the piezoelectric layer opposite the first side. The piezoelectric layer may include a first region including one or more dipole domains of a first type, and one or more dipole domains of a second type. The first electrode may be at least partially in contact with the first region and at least partially in contact with the second region.

Abstract: Various embodiments may provide a device arrangement. The device arrangement may include a substrate including a conductive layer. The device arrangement may further include a microelectromechanical systems (MEMS) device monolithically integrated with the substrate, wherein the MEMS device may be electrically coupled to the conductive layer. A cavity may be defined through the conductive layer for acoustically isolating the MEMS device MEMS device from the substrate. At least one anchor structure may be defined by the conductive layer to support the MEMS device.

Abstract: Various embodiments may provide a device arrangement. The device arrangement may include a substrate including a conductive layer. The device arrangement may further include a microelectromechanical systems (MEMS) device monolithically integrated with the substrate, wherein the MEMS device may be electrically coupled to the conductive layer. A cavity may be defined through the conductive layer for acoustically isolating the MEMS device MEMS device from the substrate. At least one anchor structure may be defined by the conductive layer to support the MEMS device.

Abstract: A split thin-flow separations device can include a fluid channel having an inlet zone, an outlet zone, and a transport region between the inlet zone and outlet zone. The inlet zone includes a sample inlet and a carrier fluid inlet which are fluidly separated by an inlet splitter to minimize mixing of fluids from respective inlets in the inlet zone. The transport region can be a substantially open channel. Similar to the inlet zone, the outlet zone can include a sample outlet and a carrier outlet which are fluidly separated by an outlet splitter to segregate portions of a fluid into each of the two outlets as the fluid enters the outlet zone. A plurality of cross-flow inducers can also be oriented along a wall of the fluid channel in the transport region. The cross-flow inducers are oriented to form a cross-flow field across the transport region.

Abstract: A method for making a microstructure includes: providing a film (100) on a release liner (110); feeding the film through a cutting plotter (10); cutting the film with a knife blade (34) of the cutting plotter to form a microstructure pattern; peeling the microstructure pattern from the release liner; and transferring the microstructure pattern to a substrate (170). The cutting plotter for making microstructures includes a knife head with a knife blade disposed adjacent a feed mechanism (20), a motor (42) and control system coupled to the knife head for selectively moving the knife head in relation to the film, and the control system and the knife head having an addressable positioning resolution less than approximately 10 ?m.