Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4 I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax [MFy]:Mn+4 I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4??I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: Synthesizing a color stable Mn4+ doped phosphor by contacting a gaseous fluorine-containing oxidizing agent with a precursor of: AaBbCcDdXx:Mn4+; AaiBbiCciDdXxYd:Mn4+; A13G2?m?nMnmMgnLi3F12Op; or AZF4:Mn4+. Where A is Li, Na, K, Rb, Cs, or a combination; B is Be, Mg, Ca, Sr, Ba, or a combination; C is Sc, Y, B, Al, Ga, In, Tl, or a combination; D is Ti, Zr, Hf, Rf, Si, Ge, Sn, Pb, or a combination; X is F or a combination of F and one of Br, Cl, and I; Y is O, or a combination of O and one of S and Se; A1 is Na or K, or a combination; G is Al, B, Sc, Fe, Cr, Ti, In, or a combination; Z is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, In, or a combination.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I includes gradually adding a first solution comprising a source of M and HF and a second solution comprising a source of Mn to a reactor, in the presence of a source of A and an anion selected from phosphate, sulfate, acetate, and combinations thereof, to form a product liquor comprising the Mn+4 doped phosphor. The process also includes gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant. A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4+ doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ?4%. A backlight device including the lighting apparatus is also presented.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I includes gradually adding a first solution comprising a source of M and HF and a second solution comprising a source of Mn to a reactor, in the presence of a source of A and an anion selected from phosphate, sulfate, acetate, and combinations thereof, to form a product liquor comprising the Mn+4 doped phosphor. The process also includes gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant. A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy|:Mn+4??I includes gradually adding a first solution to a second solution and periodically discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: Synthesizing a color stable Mn4+ doped phosphor by contacting a gaseous fluorine-containing oxidizing agent with a precursor of: AaBbCcDdXx:Mn4+; AaiBbiCciDdXxYd:Mn4+; A13G2?m?nMnmMgnLi3F12Op; or AZF4:Mn4+. Where A is Li, Na, K, Rb, Cs, or a combination; B is Be, Mg, Ca, Sr, Ba, or a combination; C is Sc, Y, B, Al, Ga, In, Tl, or a combination; D is Ti, Zr, Hf, Rf, Si, Ge, Sn, Pb, or a combination; X is F or a combination of F and one of Br, Cl, and I; Y is O, or a combination of O and one of S and Se; A1 is Na or K, or a combination; G is Al, B, Sc, Fe, Cr, Ti, In, or a combination; Z is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, In, or a combination.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4??I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.