Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

Abstract: A method of continuously coating at least one substrate with a buffer layer as a support for a ceramic superconducting material is disclosed. The method includes loading the at least one substrate onto a respective feed spool and feeding the at least one substrate through a vacuum deposition chamber. The method further includes coating the at least one substrate while the at least one substrate is bombarded by ion beams from dual RF-ion sources forming at least one coated substrate, and reloading the at least one coated substrate onto a respective take up spool.

Abstract: A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the first deposition chamber, and depositing a first buffer layer to overlie the substrate as the substrate translates along the helical winding. The buffer layer has a biaxial crystallographic texture.

Abstract: A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the first deposition chamber, and depositing a first buffer layer to overlie the substrate as the substrate translates along the helical winding. The buffer layer has a biaxial crystallographic texture.

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract: The present invention is an apparatus for and method of cooling and positioning a translating substrate tape during a continuous high-throughput deposition process such as IBAD that is characterized by a long deposition zone where the substrate tape comes into contact with a substrate assembly as it translates the length of the deposition zone. A chilled liquid passes through the substrate assembly, maintaining the temperature of the substrate assembly below a specified level. Also passing through the substrate assembly is an inert gas that exits at an interface between the translating tape and the substrate assembly.

Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

Abstract: Disclosed is an ion beam-assisted deposition system that includes a bi-lateral RF ion source system that, when used in conjunction with an electron beam, magnetron or ion beam evaporator assembly, creates a deposition zone of sufficient width to enable simultaneous deposition onto a plurality of parallel-arranged translating metal substrate tapes. The arrangement of the bilateral RF ion source is such that a pair of RF ion sources is arranged on opposite sides of an evaporation source in such a manner that a pair of ion beams is directed toward a translating set of parallel-arranged substrate tapes at incident angles of, for example, 55 degrees.